About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGB50N60TATMA1


Trans IGBT Chip N-CH 600V 90A 3-Pin(2+Tab) D2PAK
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Infineon 809
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USD 2.6105
Multiples of: 1

Single600 V1.5 V+/- 20 V90 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt333 W- 40 C+ 175 CTrenchstop Igbt
AIGB15N65H5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 800
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USD 1.6018
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         Cut Tape      
IHW20N135R5XKSA1


IGBT Transistors IGBT PRODUCTS TrenchStop RC
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Infineon 797
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USD 2.0171
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Single1350 V1.65 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole288 W- 40 C+ 175 CRc
IKW75N60H3FKSA1


IGBT Transistors INDUSTRY 14
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Infineon 790
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USD 5.0025
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Single600 V2.3 V20 V80 A100 nA428 W PG - TO - 247 - 3TubeSiThrough Hole428 W- 40 C+ 175 CIkw75n60
IKP20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon 779
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USD 1.357
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Single600 V1.5 V+/- 20 V41 A100 nA  TO - 220 - 3TubeSiThrough Hole166 W- 40 C+ 150 CIkp20n60
IGB30N60H3


Transistor: IGBT; 600V; 30A; 187W; D2PAK
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Infineon 776
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USD 1.5069
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      187 W         
AIKB50N65DF5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 775
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USD 3.9274
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         Cut Tape      
AIKB30N65DF5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 767
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USD 2.7052
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         Cut Tape      
IRG4IBC10UDPBF


Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
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Infineon 764
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USD 1.7
Multiples of: 1

Single600 V2.15 V+/- 20 V6.8 A 25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C  
IKW75N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 75A
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Infineon 757
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USD 4.2979
Multiples of: 1

Single600 V1.9 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole428 W- 40 C+ 150 CIkw75n60
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