About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXBH10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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IXYS Availability : 29
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USD 10.0864
Multiples of: 1

Single1700 V2.3 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh10n170
IXYX120N120B3


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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IXYS Availability : 29
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USD 33.5317
Multiples of: 1

Single1.2 kV1.8 V20 V320 A200 nA  PLUS - 247 - 3 SiThrough Hole1.5 kW- 55 C+ 175 C 
IXBH10N300HV


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS Availability : 29
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USD 80.6506
Multiples of: 1

Single3 kV2.2 V20 V34 A100 nA  TO - 247HV - 3 SiThrough Hole180 W- 55 C+ 150 C 
IXYH55N120C4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
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IXYS Availability : 28
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USD 6.7966
Multiples of: 1

Single1200 V - 30 V , + 30 V240 A    Tube Through Hole1150 W- 55 C+ 175 C1200V XPTTM Gen 10
IXBT10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 28
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USD 10.6094
Multiples of: 1

Single1.7 kV3.4 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxbt10n170
IXGH48N60B3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
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IXYS Availability : 28
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USD 26.7181
Multiples of: 1

 600 V1.8 V+/- 20 V75 A100 nA  TO - 247AD - 3TubeSicThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXBK75N170


IGBT Transistors BIMOSFETS 1700V 200A
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IXYS Availability : 24
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USD 71.0471
Multiples of: 1

        TO - 264 - 3TubeSiThrough Hole - 55 C+ 150 CIxbk75n170
IXBK55N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 24
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USD 122.0019
Multiples of: 1

Single3 kV2.7 V25 V130 A+/- 200 nA  TO - 264 - 3TubeSiThrough Hole625 W- 55 C+ 150 CVery High Voltage
IXGT60N60C3D1


IGBT Transistors 60 Amps 600V
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IXYS Availability : 23
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USD 6.0357
Multiples of: 1

         TubeSi    Ixgt60n60
IXBT24N170


IGBT Transistors BiMOSFETs/Reverse Conducting IGBTs
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IXYS Availability : 22
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USD 28.6227
Multiples of: 1

        TO - 268 - 2TubeSiThrough Hole   Ixbt24n170
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