High Voltage, High Gain V = 3000V IXBA10N300HV CES TM BIMOSFET Monolithic IXBH10N300HV I = 10A C110 Bipolar MOS Transistor V 2.8V CE(sat) TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 150C 3000 V CES C TO-247HV (IXBH) V T = 25C to 150C, R = 1M 3000 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 34 A C25 C I T = 110C 10 A G C110 C I T = 25C, 1ms 88 A E CM C C (Tab) C SSOA V = 15V, T = 125C, R = 10 I = 80 A GE VJ G CM (RBSOA) Clamped Inductive Load 1500 V T V = 15V, T = 125C, SC GE J G = Gate C = Collector (SCSOA) R = 82, V = 1500V, Non-Repetitive 10 s G CE E = Emitter Tab = Collector P T = 25C 180 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L High Blocking Voltage T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Anti-Parallel Diode F Mounting Force (TO-263HV) 10..65 / 22..14.6 N/lb C Low Conduction Losses M Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in d Advantages Weight TO-263HV 2.5 g TO-247HV 6.0 g Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Power Supplies BV I = 250A, V = 0V 3000 V CES C GE Uninterruptible Power Supplies (UPS) V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Laser Generators Capacitor Discharge Circuits I V = 0.8 V , V = 0V 25 A CES CE CES GE T = 125C 500 A AC Switches J I V = 0V, V = 20V 100 nA GES CE GE V I = 10A, V = 15V, Note 1 2.2 2.8 V CE(sat) C GE T = 125C 2.7 V J 2015 IXYS CORPORATION, All Rights Reserved DS100608B(9/15) IXBA10N300HV IXBH10N300HV Symbol Test Conditions Characteristic Values TO-263HV-2L Outline E A L1 (T = 25C Unless Otherwise Specified) Min. Typ. Max. c2 J D1 g I = 10A, V = 10V, Note 1 6 11 S fS C CE D H 3 E1 1 A1 2 C 1044 pF ies L4 L C V = 25V, V = 0V, f = 1MHz 42 pF L3 oes CE GE b2 b e2 e1 c C 14 pF PIN: 1 - Gate res 2 - Emitter Q 46 nC 3 - Collector g Q I = 10A, V = 15V, V = 1000V 5 nC ge C GE CE A2 Q 20 nC gc t 36 ns d(on) Resistive Switching Times, T = 25C J t 340 ns r I = 10A, V = 15V C GE t 100 ns d(off) V = 960V, R = 10 CE G t 1850 ns f t 40 ns d(on) Resistive Switching Times, T = 125C J t 765 ns r I = 10A, V = 15V C GE t 120 ns d(off) V = 960V, R = 10 CE G t 2010 ns f R 0.69 C/W thJC R TO-247HV 0.21 C/W thCS TO-247HV Outline E A E1 R 0P A2 0P1 Q S Reverse Diode D1 D 4 D2 Symbol Test Conditions Characteristic Values 1 2 3 L1 A3 (T = 25C Unless Otherwise Specified) Min. Typ. Max. D3 J 2X E2 E3 A1 L 4X V I = 10A, V = 0V 2.7 V F F GE t 1.6 s rr I = 5A, V = 0V, -di /dt = 100A/s e b b1 c F GE F e1 3X 3X I 23 A RM PINS: V = 100V, V = 0V R GE Q 18.6 C 1 - Gate 2 - Emitter RM 3, 4 - Collector Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537