About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXSH20N60B2D1


IGBT Transistors 20 Amps 600V 2.5 Rds
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IXYS 2420
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USD 4.7497
Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA190 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh20n60
IXBH40N160


IGBT Transistors 1600V 33A
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IXYS 1542
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USD 23.335
Multiples of: 1

Single1600 V 20 V    TO - 247AD - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxbh40n160
IXGT10N170


IGBT Transistors 20 Amps 1700 V 4 V Rds
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IXYS 785
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USD 5.911
Multiples of: 1

Single1.7 kV2.7 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt110 W- 55 C+ 150 CIxgt10n170
IXGH72N60A3


IGBT Transistors 72 Amps 600V 1.35 Rds
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IXYS 397
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USD 6.084
Multiples of: 1

Single600 V1.35 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgh72n60
IXGA20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 361
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USD 4.732
Multiples of: 1

         TubeSi    Ixga20n120
IXBH9N160G


IGBT Transistors 9 Amps 1600V
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IXYS 340
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USD 9.8318
Multiples of: 1

Single1600 V4.9 V20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxbh9n160
IXXH75N60B3D1


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs
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IXYS 338
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USD 5.8078
Multiples of: 1

         TubeSi    Ixxh75n60
IXYK110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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IXYS 315
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USD 17.2811
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 5
IXGT6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS 291
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USD 13.3308
Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt6n170
IXGH16N170A


IGBT Transistors 32 Amps 1700 V 5 V Rds
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IXYS 290
Ships to you
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USD 9.0045
Multiples of: 1

Single1.7 kV4.2 V20 V16 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
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