About IGBT Transistors

ON Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTB15N60EG


IGBT Transistors 15A 600V IGBT
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USD 0.1919

Multiples of: 1

 600 V1.95 V20 V30 A100 nA47 W TO - 220TubeSiThrough Hole47 W  Ngtb15n60eg
NGTB03N60R2DT4G


ON Semiconductor IGBT Transistors RC2 IGBT 3A 600V DPAK
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USD 0.2182

Multiples of: 1

Single600 V1.7 V+/- 20 V9 A+/- 100 nA  DPAK - 3ReelSiSmd/Smt49 W + 175 C 
TIG074E8-TL-H


IGBT Transistors N-CH IGBT 400V 150A VCE 3.8V SGL
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USD 0.2874

Multiples of: 1

         ReelSi    Tig074e8
NGTB20N60L2TF1G


ON Semiconductor IGBT Transistors 600V 20A IGBT TO-3PF
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USD 0.3586

Multiples of: 1

Single600 V1.45 V20 V40 A100 nA  TO - 3PF - 3LTubeSiThrough Hole64 W- 55 C+ 175 CNgtb20n60l2tf1g
NGTB05N60R2DT4G


ON Semiconductor IGBT Transistors RC2 IGBT 5A 600V DPAK
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USD 0.4068

Multiples of: 1

Single600 V1.65 V+/- 20 V16 A+/- 100 nA  DPAK - 3ReelSiSmd/Smt56 W + 175 C 
FGA40S65SH


IGBT Transistors 650V 40A Field Stop Trench IGBT
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USD 0.4228

Multiples of: 1

Single650 V1.4 V+/- 20 V80 A+/- 400 nA  TO - 3PN - 3BulkSiThrough Hole268 W- 55 C+ 175 CFga40s65sh
FGD5T120SH


IGBT Transistors 1200V 5A Field Stop Trench IGBT
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USD 0.4813

Multiples of: 2500

Single1.2 kV2.9 V+/- 25 V10 A+/- 400 nA  D - PAK - 3ReelSiSmd/Smt69 W- 55 C+ 150 CFgd5t120sh
NGTG15N60S1EG


IGBT Transistors 15A 600V IGBT
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USD 0.5186

Multiples of: 1

 600 V1.95 V20 V30 A100 nA47 W TO - 220Tube Through Hole   Ngtg15n60s1
NGTB10N60R2DT4G


ON Semiconductor IGBT Transistors RC2 IGBT 10A 600V DPAK
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USD 0.5695

Multiples of: 1

Single600 V1.7 V+/- 20 V20 A+/- 100 nA  DPAK - 3ReelSiSmd/Smt72 W + 175 C 
NGD15N41ACLT4G


ON Semiconductor IGBT Transistors IGNITION IGBT 15 A, 410 V
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USD 0.5819

Multiples of: 1

        TO - 252 - 3ReelSiSmd/Smt   Ngd15n41a
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