NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching www.onsemi.com applications. 15 A, 650 V Features Low Saturation Voltage Resulting in Low Conduction Loss V = 1.5 V CEsat Low Switching Loss in Higher Frequency Applications 5 s Short Circuit Capability C Excellent Current versus Package Size Performance Density This is a PbFree Device Typical Applications G White Goods Appliance Motor Control General Purpose Inverter E AC and DC Motor Control ABSOLUTE MAXIMUM RATINGS C Rating Symbol Value Unit Collectoremitter voltage V 650 V CES Collector current I A C TC = 25C 30 TO220 TC = 100C 15 CASE 221A G STYLE 9 Pulsed collector current, T limited by I 120 A pulse CM C E T Jmax Gateemitter voltage V 20 V GE MARKING DIAGRAM Power dissipation P W D TC = 25C 117 TC = 100C 47 Short circuit withstand time t 5 s SC V = 15 V, V = 400 V, T +150C GE CE J Operating junction temperature range T 55 to C J G15N60S1G +150 AYWW Storage temperature range T 55 to C stg +150 Lead temperature for soldering, 1/8 from T 260 C SLD case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping NGTG15N60S1EG TO220 50 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2015 Rev. 5 NGTG15N60S1E/DNGTG15N60S1EG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction to case, for IGBT R 1.06 C/W JC Thermal resistance junction to ambient R 60 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, 650 V V = 0 V, I = 500 A V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V , I = 15 A 1.3 1.5 1.7 V V GE C CEsat V = 15 V , I = 15 A, T = 150C 1.55 1.75 1.95 GE C J Gateemitter threshold voltage V = V , I = 250 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gateemitter V = 0 V, V = 600 V I 10 A GE CE CES shortcircuited V = 0 V, V = 600 V, T = 150C 200 GE CE J Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited Forward Transconductance V = 20 V, I = 15 A g 10.1 S CE C fs DYNAMIC CHARACTERISTIC Input capacitance C 1950 ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 70 pF oes CE GE Reverse transfer capacitance C 48 res Gate charge total Q 88 g Gate to emitter charge Q 16 V = 480 V, I = 15 A, V = 15 V ge nC CE C GE Gate to collector charge Q 42 gc SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Turnon delay time t 65 d(on) Rise time t 28 r ns Turnoff delay time 170 t d(off) T = 25C J V = 400 V, I = 15 A CC C Fall time t 140 f R = 22 g V = 0 V / 15 V* Turnon switching loss E 0.550 GE on Turnoff switching loss E 0.350 mJ off Total switching loss E 0.900 ts Turnon delay time t 65 d(on) Rise time t 28 r ns Turnoff delay time t 180 d(off) T = 150C J V = 400 V, I = 15 A CC C Fall time t 260 f R = 22 g V = 0 V / 15 V* Turnon switching loss GE E 0.650 on Turnoff switching loss E 0.600 mJ off Total switching loss 1.250 E ts Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTB15N60S1EG. www.onsemi.com 2