X-On Electronics has gained recognition as a prominent supplier of NGTB05N60R2DT4G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NGTB05N60R2DT4G IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NGTB05N60R2DT4G ON Semiconductor

NGTB05N60R2DT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NGTB05N60R2DT4G
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: ON Semiconductor IGBT Transistors RC2 IGBT 5A 600V DPAK
Datasheet: NGTB05N60R2DT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6209
722 : USD 0.5749
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1076
10 : USD 0.9438
100 : USD 0.7231
500 : USD 0.638
1000 : USD 0.5047
2500 : USD 0.4953
N/A

Obsolete
0
MOQ : 802
Multiples : 1
802 : USD 0.4068
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8947
10 : USD 0.7371
30 : USD 0.6584
100 : USD 0.5795
500 : USD 0.5327
1000 : USD 0.5083
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.3026
10 : USD 0.8648
25 : USD 0.7864
100 : USD 0.6614
500 : USD 0.5567
1000 : USD 0.4562
2500 : USD 0.422
5000 : USD 0.4081
N/A

Obsolete
0
MOQ : 17
Multiples : 1
17 : USD 0.6209
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the NGTB05N60R2DT4G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NGTB05N60R2DT4G and other electronic components in the IGBT Transistors category and beyond.

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NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT V (sat)=1.65V (typ) I =5A, V =15V 2,4 CE C GE IGBT t =95ns (typ) f Diode V =1.5V (typ) I =5A F F Diode t =70ns (typ) rr 5 s Short Circuit Capability 1 1:Gate 2:Collector Applications 3:Emitter 3 4:Collector General Purpose Inverter 4 Specifications DPAK Absolute Maximum Ratings at Ta=25C, Unless otherwise specified CASE 369C 2 1 Parameter Symbol Value Unit 3 V Collector to Emitter Voltage V 600 CES Gate to Emitter Voltage V 20 V GES 2 Marking Diagram A Collector Current (DC) Tc=25C * 16 1 I C * 2 A Limited by Tjmax Tc=100C * 8 Collector Current (Peak) A I 20 CP Pulse width Llimited by Tjmax I 8A Diode Average Output Current O Power Dissipation P 56 W D 2 Tc=25 C (Our ideal heat dissipation condition) * Tj 175 C Junction Temperature Tstg 55 to +175 C Storage Temperature Note : *1 Collector Current is calculated from the following formula. Tjmax - Tc I (Tc)= C R (j-c)V (sat) (I (Tc)) th CE C *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : January 2015 - Rev. 2 NGTB05N60R2DT4G/D NGTB05N60R2DT4G Electrical Characteristics at Ta=25C, Unless otherwise specified Value Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V( ) I =1mA, V=0V 600 V BR CES C GE Tc=25 C 10 A Collector to Emitter Cut off Current I V =600V, V =0V CES CE GE Tc=150C 1mA Gate to Emitter Leakage Current I V =20V, V=0V 100 nA GES GE CE Gate to Emitter Threshold Voltage V(th) V =20V, I =80A 4.5 7.0V GE CE C Tc=25 C 1.65 2.0 V Collector to Emitter Saturation Voltage V () V =15V, I =5A CE sat GE C Tc=100C 1.85 2.2 V Forward Diode Voltage V I=5A 1.5 2.1V F F Input Capacitance Cies 740 pF Output Capacitance Coes V =20V, f=1MHz 30 pF CE Reverse Transfer Capacitance Cres 20 pF Turn-ON Delay Time t (on) 44 ns d Rise Time t 26 ns r V =300V, I =5A CC C Turn-ON Time ton 139 ns R =30, L=500 H G Turn-OFF Delay Time t(off) 82 ns d V =0V/15V GE Fall Time Vclamp=400V t 95 ns f Tc=25 C Turn-OFF Time toff 186 ns See Fig.1, See Fig.2 Turn-ON Energy Eon 188 J Turn-OFF Energy Eoff 60 J Total Gate Charge Qg 30 nC Gate to Emitter Charge Qge V =300V, V =15V, I =5A 6 nC CE GE C Gate to Collector Miller Charge Qgc 14 nC Diode Reverse Recovery Time t I =5A,di/dt=300A/ s, V =300V, See Fig.3 70 ns rr F CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta=25C, Unless otherwise specified Parameter Symbol Conditions Value Unit Tc=25 C Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) 2.7 C/W 2 (Our ideal heat dissipation condition) * Thermal Resistance (Junction to Ambient) Rth(j-a) 100 C/W Note : *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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