About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW80V60DF


STMicroelectronics IGBT Transistors Trench gate V series 600V 80A HiSpd
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STMicroelectronics 3589
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USD 5.1437
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Single600 V1.85 V20 V120 A250 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
STGWA60H65DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 2910
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USD 2.7939
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Single650 V2 V+/- 20 V80 A250 nA  TO - 247 - 3 SiThrough Hole375 W- 55 C+ 175 C600 - 650V Igbts
STGB10NC60KDT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics 2906
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USD 0.6182
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Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60kd
STGWA25M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 2886
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USD 3.0881
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Single1.2 kV1.85 V20 V50 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGD10NC60KT4


IGBT Transistors IGBT
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STMicroelectronics 2404
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USD 1.2585
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Single600 V +/- 20 V    DPAK - 3Cut TapeSiSmd/Smt - 55 C+ 150 CStgd10nc60kd
STGP6NC60HD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 2322
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USD 0.6352
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Single600 V1.9 V20 V15 A100 nA56 W TO - 220 - 3TubeSiThrough Hole56 W- 55 C+ 150 CStgp6nc60hd
STGD18N40LZT4


IGBT Transistors EAS 180 mJ-400 V clamped IGBT
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STMicroelectronics 2318
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USD 1.1506
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Single360 V 12 V   Aec - Q101DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgd18n40lz
STGW30V60DF


IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 2298
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USD 2.219
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Single600 V2.35 V20 V60 A250 nA  TO - 247TubeSiThrough Hole258 W- 55 C+ 175 CStgw30v60df
STGD4M65DF2


IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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STMicroelectronics 2229
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USD 0.6058
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Single650 V1.6 V+/- 20 V8 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt68 W- 55 C+ 175 CStgd4m65df2
STGD5NB120SZT4


Transistor: IGBT; 1200V; 5A; 75W; DPAK
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STMicroelectronics 0
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USD 1.1139
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