STGW80V60DF STMicroelectronics

STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features TAB Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.85 V (typ.) I = 80 A CE(sat) C Tight parameters distribution 3 Safe paralleling 3 2 2 1 Low thermal resistance 1 Very fast soft recovery antiparallel diode TO-247 TO-3P Applications Photovoltaic inverters Figure 1. Internal schematic diagram Uninterruptible power supply C (2 or TAB) Welding Power factor correction Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to E (3) maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW80V60DF GW80V60DF TO-247 Tube STGWT80V60DF GWT80V60DF TO-3P Tube January 2014 DocID024362 Rev 2 1/18 This is information on a product in full production. www.st.com 18Contents STGW80V60DF, STGWT80V60DF Contents 1 Electrical ratings 2 2 Electrical characteristics . 3 2.1 Electrical characteristics (curves) 5 3 Test circuits 10 4 Package mechanical data 11 5 Revision history . 15 2/18 DocID024362 Rev 2