About IGBT Transistors

Vishay IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
VS-GT90SA120U


IGBT Transistors SOT-227 - SINGLE SWITCH IGBT
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Vishay 620
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USD 33.7898
Multiples of: 1

         Tube      
VS-GP400TD60S


IGBT Transistors Ic 400A Vce(On)1.30V Half Brdge Trench PT
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Vishay 12
Ships to you
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USD 205.9344
Multiples of: 1

Dual600 V-20 V758 A+/- 750 nA  DIAP SiChassis1.563 kW- 40 C+ 150 C 
VS-GP300TD60S


IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT
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Vishay 10
Ships to you
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USD 191.2176
Multiples of: 1

Dual600 V-20 V580 A+/- 500 nA  DIAP SiChassis1.136 kW- 40 C+ 150 C 
VS-GP250SA60S


IGBT Module PT, Trench Single 600 V 380 A 893 W Chassis Mount SOT-227
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Vishay 0
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USD 19.9441
Multiples of: 1

Single600 V-20 V380 A+/- 350 nA  SOT - 227 SiChassis893 W- 40 C+ 150 C 
VS-GT140DA60U


IGBT Transistors 600 Volt 140 Amp
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Vishay 0
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USD 29.3654
Multiples of: 80

          FRED Pt®     
VS-GA200SA60UP


IGBT Transistors N-Ch 600 Volt 100A
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Vishay 0
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USD 40.2247
Multiples of: 1

Single600 V +/- 20 V    SOT - 227 - 4TubeSiSmd/Smt - 55 C+ 150 C 
VS-GP100TS60SFPBF


IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT
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Vishay 0
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USD 40.4435
Multiples of: 1

Dual600 V-20 V337 A+/- 500 nA  in T - A - PAK SiChassis781 W- 40 C+ 150 C 
VS-CPV364M4KPBF


IGBT Transistors 600 Volt 13 Amp
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Vishay 0
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USD 47.1057
Multiples of: 1

Hex600 V +/- 20 V    IMS - 2 - 13BulkSiThrough Hole - 55 C+ 150 C 
VS-CPV364M4FPBF


Vishay IGBT Transistors 600 Volt 15 Amp
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Vishay 0
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USD 47.1668
Multiples of: 1

Hex600 V +/- 20 V27 A   IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
VS-CPV363M4UPBF


IGBT Transistors 600 Volt 6.8 Amp
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Vishay 0
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USD 51.9569
Multiples of: 1

Hex600 V 20 V    IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
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