VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon L Series FEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance SOT-227 please see www.vishay.com/doc 99912 BENEFITS PRIMARY CHARACTERISTICS V 600 V CES Optimized for high current inverter stages (AC TIG weldin g I DC 239 A at 90 C machine) C V typical at 100 A, 25 C 1.10 V CE(on) Direct mounting to heatsink Speed DC to 1 kHz Plug-in compatible with other SOT-227 packages Package SOT-227 Lower conduction losses Circuit configuration Single switch no diode Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 380 C Continuous collector current I C T = 90 C 239 C A Pulsed collector current I 600 CM Clamped inductive load current I 400 LM Gate-to-emitter voltage V 20 V GE T = 25 C 893 C Power dissipation, IGBT P W D T = 90 C 429 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 250 A 600 - - BR(CES) GE C V = 15 V, I = 100 A - 1.10 1.30 GE C Collector to emitter voltage V V = 15 V, I = 100 A, T = 125 C - 1.03 - CE(on) GE C J V V = 15 V, I = 100 A, T = 150 C - 1.0 - GE C J V = V , I = 3.2 mA 4.1 6.1 8.1 CE GE C Gate threshold voltage V GE(th) V = V , I = 3.2 mA, T = 125 C - 3.5 - CE GE C J Temperature coefficient of threshold V /T V = V , I = 3.2 mA, (25 C to 125 C) - -26 - mV/C GE(th) J CE GE C voltage V = 0 V, V = 600 V - 1.0 100 GE CE Collector to emitter leakage current I V = 0 V, V = 600 V, T = 125 C - 350 - A CES GE CE J V = 0 V, V = 600 V, T = 150 C - 700 - GE CE J Gate to emitter leakage current I V = 20 V - - 350 nA GES GE Revision: 10-Sep-2019 Document Number: 95766 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GP250SA60S www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 942 - g Gate to emitter charge (turn-on) Q I = 100 A, V = 400 V, V = 15 V - 295 - nC ge C CC GE Gate to collector charge (turn-on) Q - 802 - gc Turn-on switching loss E -2.2 - on Turn-off switching loss E -11 - mJ off Total switching loss E - 13.2 - tot I = 100 A, V = 480 V, C CC Turn-on delay time t V = 15 V, R = 5 - 300 - d(on) GE g L = 500 H, T = 25 C J Rise time t -85 - r ns Energy losses Turn-off delay time t - 515 - d(off) include tail Fall time t - 450 - f and diode recovery. Turn-on switching loss E -2.6 - on diode used Turn-off switching loss E - 21.5 - mJ off 60APH06 Total switching loss E - 24.1 - tot I = 100 A, V = 480 V, C CC Turn-on delay time t V = 15 V, R = 5 - 285 - d(on) GE g L = 500 H, T = 125 C J Rise time t -85 - r ns Turn-off delay time t - 785 - d(off) Fall time t - 790 - f T = 150 C, I = 400, R = 5 J C g Reverse bias safe operating area RBSOA V = 15 V to 0 V, V = 480 V, Fullsquare GE CC V = 600 V, L = 500 H P THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T , T -40 - 150 C J Stg Junction to case R - - 0.14 thJC C/W Case to heatsink R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 10-Sep-2019 Document Number: 95766 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000