About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
Hot IKW40N120H3


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 1141
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USD 3.388

Multiples of: 1

Single1200 V2.05 V+/- 20 V80 A600 nA483 W TO - 247 - 3TubeSiThrough Hole483 W- 40 C+ 175 CIkw40n120
IXGH24N120C3


IGBT Transistors 48 Amps 1200V
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IXYS Availability : 360
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USD 5.951

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Single1200 V3.6 V20 V48 A100 nA  TO - 247AD - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh24n120
RGW80TK65DGVC11


IGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT
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ROHM Availability : 358
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USD 3.8251

Multiples of: 1

Single650 V1.5 V30 V39 A200 nA  TO - 3PFMTubeSiThrough Hole81 W- 40 C+ 175 C 
RGTH80TS65GC11


IGBT Transistors 650V 40A Trench IGBT Field Stop TO-247N
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ROHM Availability : 350
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USD 2.4669

Multiples of: 1

Single650 V1.6 V+/- 30 V70 A200 nA  TO - 247N - 3Tube Through Hole234 W- 40 C+ 175 C 
IXA17IF1200HJ


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
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IXYS Availability : 348
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USD 12.111

Multiples of: 1

Single1200 V1.8 V20 V28 A500 nA  ISOPLUS 247 - 3TubeSiThrough Hole100 W- 55 C+ 150 CIxa17if1200
RGW40TS65GC11


IGBT Transistors 650V 20A Field Stop Trench IGBT
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ROHM Availability : 344
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USD 2.3857

Multiples of: 1

Single650 V1.9 V30 V40 A   TO - 247N - 3TubeSiThrough Hole136 W- 40 C+ 175 C 
STGB30M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 342
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USD 1.0316

Multiples of: 1

         ReelSi    600 - 650V Igbts
STGP15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics Availability : 339
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USD 0.9174

Multiples of: 1

Single600 V1.6 V+/- 20 V30 A250 nA115 W TO - 220 - 3TubeSiThrough Hole115 W- 55 C+ 175 CStgp15h60df
FGA30N60LSDTU


IGBT Transistors 30A 600V N-Ch Planar
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ON Semiconductor Availability : 339
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USD 3.2969

Multiples of: 1

Single600 V +/- 20 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga30n60lsdtu
IKW75N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 395W Through Hole PG-TO247-3
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Infineon Availability : 339
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USD 7.678

Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
IGB10N60T


Infineon Technologies IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech
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Infineon Availability : 337
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USD 0.4213

Multiples of: 1

Single600 V2.05 V20 V20 A100 nA  PG - TO - 263 - 3ReelSiSmd/Smt110 W- 40 C+ 175 CIgb10n60
IXGH40N120C3D1


IGBT Transistors 75Amps 1200V
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IXYS Availability : 333
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USD 11.517

Multiples of: 1

 1.2 kV4.4 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole380 W- 55 C+ 150 CIxgh40n120
IGW50N60H3


Transistor: IGBT; 600V; 50A; 333W; TO247-3; Series: H3
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Infineon Availability : 329
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USD 1.837

Multiples of: 1

      333 W   Trenchstop 3    H3
IGW75N60TFKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 75A
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Infineon Availability : 329
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USD 2.079

Multiples of: 1

Single600 V1.5 V+/- 20 V150 A100 nA  TO - 247 - 3TubeSiThrough Hole428 W- 40 C+ 175 CXgw75n60
NGTB15N120IHRWG


Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Rail
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ON Semiconductor Availability : 329
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USD 2.2969

Multiples of: 1

Single        Rail/TubeSi    Ngtb15n120ihr
IXBX75N170


IGBT Transistors BIMOSFETS 1700V 200A
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IXYS Availability : 328
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USD 56.749

Multiples of: 1

        PLUS 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbx75n170
IXYH50N120C3D1


IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 327
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USD 7.755

Multiples of: 1

Single1200 V4.2 V30 V90 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 150 CIxyh50n120
STGW40H65DFB


IGBT Transistors 600V 40A trench gate field-stop IGBT
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STMicroelectronics Availability : 325
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USD 1.3126

Multiples of: 1

Single650 V1.8 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65dfb
IXGH72N60A3


IGBT Transistors 72 Amps 600V 1.35 Rds
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IXYS Availability : 283
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USD 6.259

Multiples of: 1

Single600 V1.35 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgh72n60
IKQ120N60TXKSA1


Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
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Infineon Availability : 207
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USD 5.467

Multiples of: 1

      833 W   Trenchstop     
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