Product Information

STGW40H65DFB

STGW40H65DFB electronic component of STMicroelectronics

Datasheet
IGBT Transistors 600V 40A trench gate field-stop IGBT
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1325 ea
Line Total: USD 2.13

1 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
1 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

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STGW40H65DFB
STMicroelectronics

1 : USD 2.1325
10 : USD 2.0899
25 : USD 2.0899
100 : USD 2.0899

75 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

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STGW40H65DFB
STMicroelectronics

1 : USD 6.344
10 : USD 5.954
25 : USD 5.551
60 : USD 5.148
120 : USD 4.823

83 - WHS 3


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1

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STGW40H65DFB
STMicroelectronics

1 : USD 5.921
10 : USD 5.192
30 : USD 4.5635
100 : USD 4.1245
500 : USD 3.9231
1000 : USD 3.8325

75 - WHS 4


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 26
Multiples : 1

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STGW40H65DFB
STMicroelectronics

26 : USD 3.4986

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STGW40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current Low saturation voltage: V = 1.6 V (typ.) I = 40 A CE(sat) C 3 2 Tight parameter distribution 1 Safe paralleling TO-247 Positive V temperature coefficient CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW40H65DFB Product summary Order code STGW40H65DFB Marking GW40H65DFB Package TO-247 Packing Tube DS9533 - Rev 9 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGW40H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 160 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 Continuous forward current at T = 25 C 80 C I A F Continuous forward current at T = 100 C 40 C (1) I Pulsed forward current 160 A FP P Total power dissipation at T = 25 C 283 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.53 thJC R Thermal resistance junction-case diode 1.14 C/W thJC R Thermal resistance junction-ambient 50 thJA DS9533 - Rev 9 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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