About MOSFET

IXYS MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CPC3982TTR


MOSFET N-Ch Depletion Mode Vertical DMOS FET
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IXYS 308
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USD 0.2639
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20 mA800 V380 OhmsN - Channel  - 55 C+ 110 C400 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel15 V Depletion  
IXTA52P10P


MOSFET -52.0 Amps -100V 0.050 Rds
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IXYS 298
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USD 5.1154
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52 A100 V50 mOhmsP - Channel  - 55 C+ 150 C300 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V Enhancement  
IXTQ60N20T


Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3)
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IXYS 295
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USD 1.94
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60 A200 V40 mOhmsN - Channel 3 V- 55 C+ 175 C500 WThrough HoleTO - 3PTube  20 V   Trench
IXTP44N10T


MOSFET 44 Amps 100V 25.0 Rds
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IXYS 291
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USD 1.196
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44 A100 V30 mOhmsN - Channel  - 55 C+ 175 C130 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Hiperfet
IXTA32P05T


MOSFET 32 Amps 50V 0.036 Rds
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IXYS 291
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USD 1.872
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32 A50 V39 mOhmsP - Channel  - 55 C+ 150 C83 WSmd/SmtTO - 263 - 3TubeSi1 Channel15 V Enhancement  
IXFP10N60P


MOSFET HiPERFET Id10 BVdass600
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IXYS 291
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USD 2.139
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10 A600 V740 mOhmsN - Channel  - 55 C+ 150 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IXTP42N25P


MOSFET 42 Amps 250V 0.084 Rds
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IXYS 291
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USD 2.4856
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42 A250 V84 mOhmsN - Channel 5.5 V- 55 C+ 150 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V70 nCEnhancement Polarht
IXTP3N50D2


MOSFET N-CH MOSFETS (D2) 500V 3A
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IXYS 291
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USD 2.639
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3 A500 V1.5 OhmsN - Channel  - 55 C+ 150 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V40 nC   
IXTA05N100HV


MOSFET High Voltage Power MOSFET
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IXYS 291
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USD 3.302
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750 mA1 kV17 OhmsN - Channel 2.5 V- 55 C+ 150 C40 WSmd/SmtTO - 263 - 3TubeSi1 Channel30 V7.8 nCEnhancement  
IXTP62N15P


MOSFET 62 Amps 150V 0.04 Rds
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IXYS 291
Ships to you
between Tue. 14 May to Mon. 20 May Calender.png

USD 3.3566
Multiples of: 1

62 A150 V40 mOhmsN - Channel  - 55 C+ 175 C350 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement  
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