About MOSFET

IXYS MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFP56N30X3


MOSFET DiscMSFT NChUltrJnctX3Class TO-220AB/FP
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IXYS 486
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USD 4.9795
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           Tube      Hiperfet
IXFH14N80P


MOSFET DIODE Id14 BVdass800
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IXYS 477
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USD 4.692
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14 A800 V720 mOhmsN - Channel 5.5 V- 55 C+ 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V61 nCEnhancement Hiperfet
IXFH32N100X


MOSFET 1000V 32A TO-247 Power MOSFET
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IXYS 465
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USD 17.16
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32 A1000 V220 mOhmsN - Channel 3.5 V- 55 C+ 150 C890 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V130 nCEnhancement Hiperfet
IXFA8N65X2


MOSFET 650V/8A TO-263
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IXYS 450
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USD 2.431
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8 A650 V450 mOhmsN - Channel 3 V- 55 C+ 150 C150 WSmd/SmtTO - 263 - 3TubeSi1 Channel10 V11 nCEnhancement Hiperfet
IXTQ130N10T


N-Channel 100 V 130A (Tc) 360W (Tc) Through Hole TO-3P
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IXYS 436
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USD 2.7019
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130 A100 V8.5 mOhmsN - Channel  - 55 C+ 175 C360 WThrough HoleTO - 3P - 3TubeSi1 Channel  Enhancement  
IXFH13N50


MOSFETs w/Fast Intrinsic Diode
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IXYS 433
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USD 19.2276
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           -       
IXFA34N65X3


MOSFET DISCRETE MOSFET 34A 650V X3 TO
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IXYS 388
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USD 5.3793
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34 A650 V100 OhmsN - Channel 5.2 V- 55 C+ 150 C446 WSMD/SMT TubeSi1 Channel- 20 V , + 20 V29 nCEnhancement  
IXFK64N50P


500V 64A 830W 85mO@10V,32A N Channel TO-264-3 MOSFETs ROHS
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IXYS 384
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USD 9.8015
Multiples of: 1

64 A500 V85 mOhmsN - Channel  - 55 C+ 150 C830 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IXTA26P20P-TRL


MOSFET IXTA26P20P TRL
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IXYS 368
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USD 4.3494
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IXTP3N120


MOSFET MOSFET Id3 BVdass1200
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IXYS 340
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USD 4.0993
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3 A1.2 kV4.5 OhmsN - Channel 2.5 V- 55 C+ 150 C200 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V42 nCEnhancement  
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