About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS670S2LH6327XTSA1


Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
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Infineon 162960
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USD 0.0491
Multiples of: 3000

            Optimos      
BSS126H6906XT


Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R
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Infineon 122220
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USD 0.2851
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IPG20N06S2L65AATMA1


MOSFET MOSFET
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Infineon 121250
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USD 0.4904
Multiples of: 5000

   N - Channel     Smd/SmtTDSON - 8Cut TapeSi1 Channel   Aec - Q101Optimos
BSZ065N06LS5ATMA1


MOSFET MV POWER MOS
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Infineon 119833
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USD 0.5727
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         Smd/SmtTSDSON - 8ReelSi      
Hot IRF540NPBF


MOSFET N Trench 100V 33A 4V @ 250uA 44 mΩ @ 16A,10V TO-220 (TO-220-3) RoHS
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Infineon 117163
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USD 0.2229
Multiples of: 1

            Hexfet®      
IRLML2030TRPBF


MOSFET N Trench 30V 2.7A 2.3V @ 25uA 100 mΩ @ 2.7A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 116400
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USD 0.067
Multiples of: 3000

            Hexfet®      
SN7002N H6433


Infineon Technologies MOSFET
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Infineon 111172
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USD 0.0437
Multiples of: 1

200 mA60 V5 OhmsP - Channel 800 mV- 55 C+ 150 C0.36 WSmd/SmtPG - SOT - 23 - 3ReelSi1 Channel10 V1 nCEnhancement  
Hot IRFR220NTRPBF


MOSFET N Trench 200V 5A 4V @ 250uA 600 mΩ @ 2.9A,10V TO-252-2 (DPAK) RoHS
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Infineon 110162
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USD 0.1952
Multiples of: 5

5 A200 V600 mOhmsN - Channel  - 55 C+ 175 C43 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
BSS139 H6327


Infineon Technologies MOSFET N-Ch 250V 30mA SOT-23-3
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Infineon 83074
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USD 0.1484
Multiples of: 1

100 mA250 V14 OhmsN - Channel 2.1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel10 V2.3 nCDepletionAec - Q101 
IRLML2402PBF


MOSFET, N, LOGIC, SOT-23
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Infineon 0
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USD 0.1574
Multiples of: 1

   N Channel               
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