About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSR316PH6327XTSA1


Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
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Infineon 156922
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USD 0.1622
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            Sipmos      
BSD235CH6327XT


MOSFET OptiMOS 2,-P 2 Small Signal Transistor
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Infineon 152017
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USD 0.1024
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950 mA , 530 mA20 V266 mOhms , 745 mOhmsN And P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
BSD235C H6327


Infineon Technologies MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
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Infineon 134619
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USD 0.0978
Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN - Channel, P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
BSD235NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 134583
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USD 0.0932
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950 mA20 V266 mOhms , 266 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi2 Channel12 V320 pC , 320 pCEnhancementAec - Q101 
BSZ146N10LS5ATMA1


100V 40A 52W 14.6mO@20A,10V N Channel TSDSON-8-FL MOSFETs ROHS
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Infineon 132138
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USD 0.6774
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         Smd/SmtTSDSON - 8Cut TapeSi      
BSC054N04NS G


MOSFET OptiMOS 3 PWR TRANS 40V 81A
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Infineon 130319
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USD 0.468
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81 A40 V5.4 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtTDSONReelSi1 Channel10 V26 nCEnhancement Optimos
BSS127H6327XTSA2


Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
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Infineon 17460
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USD 0.0714
Multiples of: 3000

            Sipmos      
IRF1310NSTRLPBF


N-Channel 100 V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK
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Infineon 15196
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USD 0.9694
Multiples of: 1

42 A100 V36 mOhmsN - Channel20 V   3.8 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V73.3 nC   
BSS159NH6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
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Infineon 5499
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USD 0.1348
Multiples of: 5

            Sipmos      
BSZ099N06LS5ATMA1


Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
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Infineon 46
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USD 0.769
Multiples of: 1

            Optimos      
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