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BSS139 H6327

BSS139 H6327 electronic component of Infineon
Part No.BSS139 H6327
Manufacturer: Infineon
Category:MOSFET
Description: Infineon Technologies MOSFET N-Ch 250V 30mA SOT-23-3
Datasheet: BSS139 H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.529 ea
Line Total: USD 0.53

47871 - Global Stock
Ships to you between
Tue. 04 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2337 - WHS 1


Ships to you between
Wed. 05 Jun to Mon. 10 Jun

MOQ : 5
Multiples : 5
5 : USD 0.3395
50 : USD 0.2757
150 : USD 0.2482
500 : USD 0.2141
3000 : USD 0.1988
6000 : USD 0.1898

47871 - WHS 2


Ships to you between Tue. 04 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 0.529
10 : USD 0.4462
100 : USD 0.3335
500 : USD 0.2622
1000 : USD 0.2093
3000 : USD 0.1771
9000 : USD 0.1598
24000 : USD 0.1507
45000 : USD 0.1483

We proudly offer the BSS139 H6327 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the BSS139 H6327 MOSFET.
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Factory Pack Quantity :
Configuration
Height
Length
Product
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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BSS139 SIPMOS Small-Signal-Transistor Product Summary Features V 250 V DS N-channel R 30 DS(on),max Depletion mode I 0.03 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating RoHS compliant PG-SOT-23 Type Package Tape and Reel Information Marking Pb-free BSS139 PG-SOT-23 H6327: 3000 pcs/ree Yes STs 1) BSS139 PG-SOT-23 STs Yes H6906: 3000 pcs/reel sorted in V bands S(th) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 C 0.10 A D A T =70 C 0.08 A Pulsed drain current I T =25 C 0.4 D,pulse A I =0.1 A,V =200 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max Gate source voltage V 20 V GS ESD class 0 (<250V) (JESD22-A114-HBM) Power dissipation P T =25 C 0.36 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 1.8 page 1 2009-08-18BSS139 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R minimal footprint - - 350 K/W thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-3 V, I =250 A Drain-source breakdown voltage 250 - - V (BR)DSS GS D Gate threshold voltage V V =3 V, I =56 A -2.1 -1.4 -1 GS(th) DS D V =250 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-3 V, T =25 C GS j V =250 V, DS -- 10 V =-3 V, T =125 C GS j I V =20 V, V =0 V Gate-source leakage current - - 10 nA GSS GS DS I V =0 V, V =10 V On-state drain current 30 - - mA DSS GS DS R V =0 V, I =15 mA Drain-source on-state resistance - 12.5 30 DS(on) GS D =10 V,I =0.1 mA V - 7.8 14 GS D V >2 I R , DS D DS(on)max g Transconductance 0.060 0.13 - S fs I =0.08 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =56 A J -1.2 - -1 V GS(th) DS D K -1.35--1.15 L -1.5 - -1.3 M -1.65--1.45 N -1.8 - -1.6 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.8 page 2 2009-08-18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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