About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSD235CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
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Infineon 353930
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USD 0.0954
Multiples of: 1

            Optimos 2      
BSS84P H6327


MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 325009
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USD 0.0403
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170 mA60 V5.8 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.5 nCEnhancement  
BSS84PWH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
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Infineon 320100
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USD 0.0375
Multiples of: 3000

            Sipmos      
BSS670S2L H6327


Infineon Technologies MOSFET N-Ch 55V 540mA SOT-23-3
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Infineon 224070
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USD 0.0524
Multiples of: 3000

           -       
Hot IRF3205PBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-220 (TO-220-3) RoHS
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Infineon 221081
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USD 0.3256
Multiples of: 1

            Hexfet®      
BSZ097N04LS G


Infineon Technologies MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
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Infineon 192836
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USD 0.3599
Multiples of: 1

12 A40 V9.7 mOhmsN - Channel20 V1.2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel10 V18 nCEnhancement Optimos
BSS308PE H6327


Infineon Technologies MOSFET P-Ch -30V -2A SOT-23-3
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Infineon 175674
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USD 0.1012
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2 A30 V62 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 5 nCEnhancementAec - Q101 
2N7002DW H6327


Infineon Technologies MOSFET N-Ch 60V 300mA SOT-363-6
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Infineon 169471
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USD 0.0552
Multiples of: 1

300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel20 V600 pC , 600 pCEnhancementAec - Q101 
BSS138NH6433XTMA1


MOSFET SMALL SIGNAL N-CH
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Infineon 67900
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USD 0.0358
Multiples of: 10000

230 mA60 V3.5 OhmsN - Channel20 V1.4 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V1 nCEnhancement  
BSD235NH6327XTSA1


Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
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Infineon 66930
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USD 0.0864
Multiples of: 3000

            Optimos 2      
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