About MOSFET

Ixys MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFQ20N50P3


MOSFET Polar3 HiPerFET Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 369
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USD 4.1848
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20 A500 V300 mOhmsN - Channel 5 V- 55 C+ 150 C380 WThrough HoleTO - 3P - 3TubeSi 30 V36 nCEnhancement Hiperfet
IXTA26P20P-TRL


MOSFET IXTA26P20P TRL
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IXYS 368
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USD 4.4875
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IXTP3N120


MOSFET MOSFET Id3 BVdass1200
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IXYS 340
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USD 4.2294
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3 A1.2 kV4.5 OhmsN - Channel 2.5 V- 55 C+ 150 C200 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V42 nCEnhancement  
CPC5604A


Data Access Arrangement IC 32-Pin SOIC T/R
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IXYS 340
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USD 6.1945
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IXTK400N15X4


MOSFET 150V400A Ultra Junction X4-Class Power MOSFET TO-264
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IXYS 339
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USD 52.764
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400 A150 V3.1 mOhmsN - Channel 4.5 V- 55 C+ 175 C1.5 kWThrough HoleTO - 264P  1 Channel20 V430 nCEnhancement Hiperfet
IXTQ96N20P


Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P
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IXYS 335
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USD 4.1239
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96 A200 V24 mOhmsN - Channel  - 55 C+ 175 C600 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
IXTQ50N25T


250V 50A 400W 60mO@10V,25A N Channel TO-3P-3 MOSFETs ROHS
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IXYS 331
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USD 2.3755
Multiples of: 1

50 A250 V60 mOhmsN - Channel 5 V- 55 C+ 150 C400 WThrough HoleTO - 3P - 3TubeSi1 Channel30 V78 nCEnhancement Hiperfet
IXFH34N65X3


MOSFET DISCRETE MOSFET 34A 650V X3 TO
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IXYS 331
Ships to you
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USD 4.9375
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34 A650 V100 OhmsN - Channel 5.2 V- 55 C+ 150 C446 WThrough Hole TubeSi1 Channel- 20 V , + 20 V29 nCEnhancement  
IXTQ82N25P


MOSFET 82 Amps 250V 0.035 Rds
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IXYS 323
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USD 4.2416
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82 A250 V35 mOhmsN - Channel  - 55 C+ 150 C500 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
IXTH30N50L2


MOSFET 30.0 Amps 500V 0.002 Rds
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IXYS 320
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USD 26.5422
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30 A500 V200 mOhmsN - Channel 4.5 V- 55 C+ 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V240 nCEnhancement Linear L2
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