About MOSFET

Ixys MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CPC5603CTR


Trans MOSFET N-CH Si 415V 0.005A 4-Pin(3+Tab) SOT-223 Tube
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IXYS 971
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USD 0.566
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5 mA415 V14 OhmsN - Channel     Smd/SmtSOT - 223 - 3Cut TapeSi1 Channel  Depletion Clare
CPC3714CTR


MOSFET N Ch Dep Mode FET 250V
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IXYS 970
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USD 0.566
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   N - Channel     Smd/SmtSOT - 89 - 3Cut TapeSi1 Channel    Clare
CPC3980ZTR


MOSFET N-Ch Depletion Mode Vertical DMOS FET
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IXYS 935
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USD 0.4248
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100 mA800 V45 OhmsN - Channel  - 55 C+ 125 C1.8 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel15 V Depletion  
IXTX90P20P


MOSFET -90.0 Amps -200V 0.044 Rds
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IXYS 855
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USD 15.8517
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90 A200 V44 mOhmsP - Channel 4 V- 55 C+ 150 C890 WThrough HolePLUS - 247 - 3TubeSi1 Channel20 V205 nCEnhancement Polarp
IXFH12N90


Trans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD
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IXYS 751
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USD 59.67
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12 A900 V1.1 OhmsN - Channel20 V - 55 C+ 150 C300 WThrough HoleTO - 247 - 3Tube    Enhancement  
IXFP56N30X3


MOSFET DiscMSFT NChUltrJnctX3Class TO-220AB/FP
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IXYS 729
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USD 5.1376
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           Tube      Hiperfet
IXFT94N30P3


MOSFET N-Channel: Power MOSFET w/Fast Diode
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IXYS 696
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USD 16.2196
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94 A300 V36 mOhmsN - Channel 3 V- 55 C+ 150 C1040 WSmd/SmtTO - 268 - 3TubeSi1 Channel20 V102 nCEnhancement Hiperfet
IXTA1N170DHV


MOSFET MSFT N-CH DEPL MODE-STD
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IXYS 679
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USD 19.9365
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1 A1.7 kV16 OhmsN - Channel  - 55 C+ 150 C290 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V47 nCDepletion  
IXFP34N65X2


MOSFET 650V/34A Ultra Junction X2-Class
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IXYS 593
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USD 5.3274
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34 A650 V105 mOhmsN - Channel 2.7 V- 55 C+ 150 C540 WThrough HoleTO - 220 - 3TubeSi 30 V56 nCEnhancement Hiperfet
IXTA10P50P


MOSFET -10.0 Amps -500V 1.000 Rds
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IXYS 582
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USD 4.6273
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10 A500 V1 OhmsP - Channel 2 V- 55 C+ 150 C300 WSmd/SmtTO - 263AA - 3TubeSi1 Channel10 V50 nCEnhancement  
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