About MOSFET

Ixys MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFY36N20X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-252D
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IXYS 313
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USD 3.1788
Multiples of: 1

           Tube      Hiperfet
IXTK82N25P


MOSFET 82 Amps 250V 0.035 Rds
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IXYS 310
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USD 6.034
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82 A250 V35 mOhmsN - Channel 5 V- 55 C+ 150 C500 WThrough HoleTO - 264 - 3TubeSi1 Channel20 V142 nCEnhancement Polarht
IXTQ60N20T


Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3)
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IXYS 295
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USD 2.0015
Multiples of: 1

60 A200 V40 mOhmsN - Channel 3 V- 55 C+ 175 C500 WThrough HoleTO - 3PTube  20 V   Trench
IXTA32P05T


MOSFET 32 Amps 50V 0.036 Rds
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IXYS 291
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USD 1.8778
Multiples of: 1

32 A50 V39 mOhmsP - Channel  - 55 C+ 150 C83 WSmd/SmtTO - 263 - 3TubeSi1 Channel15 V Enhancement  
IXFP10N60P


MOSFET HiPERFET Id10 BVdass600
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IXYS 291
Ships to you
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USD 2.2069
Multiples of: 1

10 A600 V740 mOhmsN - Channel  - 55 C+ 150 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IXTP42N25P


MOSFET 42 Amps 250V 0.084 Rds
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IXYS 291
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USD 2.5645
Multiples of: 1

42 A250 V84 mOhmsN - Channel 5.5 V- 55 C+ 150 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V70 nCEnhancement Polarht
IXTA05N100HV


MOSFET High Voltage Power MOSFET
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IXYS 291
Ships to you
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USD 3.38
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750 mA1 kV17 OhmsN - Channel 2.5 V- 55 C+ 150 C40 WSmd/SmtTO - 263 - 3TubeSi1 Channel30 V7.8 nCEnhancement  
IXFP22N65X2M


MOSFET 650V/22A OVERMOLDED TO-220
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IXYS 291
Ships to you
between Fri. 24 May to Thu. 30 May Calender.png

USD 3.4068
Multiples of: 1

22 A650 V145 mOhmsN - Channel 3.5 V- 55 C+ 150 C37 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V37 nCEnhancement Hiperfet
IXTP3N50D2


MOSFET N-CH MOSFETS (D2) 500V 3A
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IXYS 291
Ships to you
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USD 3.4739
Multiples of: 1

3 A500 V1.5 OhmsN - Channel  - 55 C+ 150 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V40 nC   
IXTA76P10T


MOSFET -76 Amps -100V 0.024 Rds
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IXYS 291
Ships to you
between Fri. 24 May to Thu. 30 May Calender.png

USD 4.3725
Multiples of: 50

76 A100 V25 mOhmsP - Channel 2 V- 55 C+ 150 C298 WSmd/SmtTO - 263AA - 3TubeSi1 Channel10 V197 nCEnhancement Trenchp
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