About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDN327N


Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
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ON Semiconductor Availability : 37830
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USD 0.1182

Multiples of: 3000

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FDN358P


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
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ON Semiconductor Availability : 37830
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USD 0.1794

Multiples of: 3000

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FDC604P


MOSFET SSOT-6 P-CH
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ON Semiconductor Availability : 37830
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USD 0.2119

Multiples of: 3000

5.5 A20 V33 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6Cut TapeSi1 Channel8 V Enhancement Powertrench
FQD17P06TM


Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
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ON Semiconductor Availability : 37708
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USD 0.5002

Multiples of: 1

            Qfet®      
FDG6332C


MOSFET 20V N&P-Channel Power Trench
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ON Semiconductor Availability : 36852
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USD 0.1587

Multiples of: 1

700 mA20 V300 mOhmsN - Channel, P - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 6Cut TapeSi2 Channel12 V Enhancement Powertrench
NTGS3446T1G


MOSFET 20V 5.1A N-Channel
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ON Semiconductor Availability : 36586
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USD 0.2185

Multiples of: 1

2.5 A20 V36 mOhmsN - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6ReelSi1 Channel12 V Enhancement  
HUF75321D3ST


MOSFET 20a 55V N-Channel UltraFET
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ON Semiconductor Availability : 36375
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USD 0.4316

Multiples of: 2500

20 A55 V36 mOhmsN - Channel  - 55 C+ 175 C93 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V Enhancement Ultrafet
NTMFS5H610NLT1G


MOSFET T8 60V LOW COSS
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ON Semiconductor Availability : 36181
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USD 0.3565

Multiples of: 1

44 A60 V10 mOhmsN - Channel 1.2 V- 55 C+ 150 C43 WSmd/SmtDFN - 5Cut TapeSi1 Channel20 V13.7 nCEnhancement  
FDT86244


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor Availability : 36081
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USD 0.3715

Multiples of: 1

2.8 A150 V128 mOhmsN - Channel 3.1 V- 55 C+ 150 C2.2 WSmd/SmtSOT - 223ReelSi1 Channel20 V4.9 nC  Powertrench
FDY1002PZ


MOSFET -20V DUAL P-CHAN POWERTRENCH
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ON Semiconductor Availability : 34920
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USD 0.1917

Multiples of: 3000

830 mA20 V500 mOhmsP - Channel  - 55 C+ 150 C625 mWSmd/SmtSC - 89 - 6ReelSi2 Channel8 V Enhancement Powertrench
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