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FDT86244 N-Channel Shielded Gate PowerTrench MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.8 A, 128 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 128 m at V = 10 V, I = 2.8 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 178 m at V = 6 V, I = 2.4 A optimized for r , switching performance and ruggedness. DS(on) GS D DS(on) High Performance Trench Technology for Extremely Low r DS(on) Applications High Power and Current Handling Capability in a Widely Used Surface Mount Package Load Switch Fast Switching Speed Primary Switch 100% UIL Tested RoHS Compliant D D S D G SOT-223 G D S MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 1a) 2.8 A I A D -Pulsed 12 E Single Pulse Avalanche Energy (Note 3) 12 mJ AS Power Dissipation T = 25 C (Note 1a) 2.2 A P W D Power Dissipation T = 25 C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 12 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 55 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 86244 FDT86244 SOT-223 13 12 mm 2500 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDT86244 Rev.1.3