NTGS3446 Power MOSFET 20 V, 5.1 A Single NChannel, TSOP6 Features Ultra Low R DS(on) NTGS3446 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain toSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 0.25 mAdc) 20 GS D Temperature Coefficient (Positive) 22 mV/C Zero Gate Voltage Collector Current I Adc DSS (V = 20 Vdc, V = 0 Vdc) 1.0 DS GS (V = 20 Vdc, V = 0 Vdc, T = 85C) 25 DS GS J GateBody Leakage Current (V = 12 Vdc, V = 0) I 100 nAdc GS DS GSS(f) I 100 GSS(r) ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V Vdc GS(th) I = 0.25 mA, V = V 0.6 0.85 1.2 D DS GS Temperature Coefficient (Negative) 2.5 mV/C Static Drain toSource On Resistance R m DS(on) (V = 4.5 Vdc, I = 5.1 Adc) 36 45 GS D (V = 2.5 Vdc, I = 4.4 Adc) 44 55 GS D Forward Transconductance (V = 10 Vdc, I = 5.1 Adc) g 12 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 510 750 pF iss (V = 10 Vdc, V = 0 Vdc, DS GS Output Capacitance C 200 350 oss f = 1.0 MHz) Transfer Capacitance C 60 100 rss SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.0 16 ns d(on) Rise Time t 12 20 r (V = 10 Vdc, I = 1.0 Adc, DD D V = 4.5 Vdc, R = 6.0 ) GS G Turn Off Delay Time t 35 60 d(off) Fall Time t 20 35 f Gate Charge Q 8.0 15 nC T (V = 10 Vdc, I = 5.1 Adc, DS D Q 2.0 gs V = 4.5 Vdc) GS Q 2.0 gd SOURCE DRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 4) V Vdc SD (I = 1.7 Adc, V = 0 Vdc) 0.74 1.1 S GS (I = 1.7 Adc, V = 0 Vdc, T = 85C) 0.66 S GS J Reverse Recovery Time t 20 ns rr t 11 a (I = 1.7 Adc, V = 0 Vdc, S GS t 9.0 di /dt = 100 A/ s) b S Reverse Recovery Stored Q 0.01 C RR Charge 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature.