About MOSFET

Stmicroelectronics MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD10PF06-1


P-Channel 60 V 10A (Tc) 40W (Tc) Through Hole I-PAK
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STMicroelectronics 96967
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USD 0.6572
Multiples of: 1

10 A- 60 V180 mOhmsP - Channel20 V - 65 C+ 175 C40 WThrough HoleIPAK - 3Tube    Enhancement  
STD20NF06T4


Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK
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STMicroelectronics 87300
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USD 0.5997
Multiples of: 2500

            Supermesh      
STB45N65M5


MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh V MOS
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STMicroelectronics 74690
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USD 5.5354
Multiples of: 1000

35 A650 V78 mOhmsN - Channel    208 WThrough HoleD2PAKReelSi1 Channel    Mdmesh
STP24NF10


Transistor: N-MOSFET; unipolar; 100V; 18A; 85W; TO220-3
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STMicroelectronics 69530
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USD 0.3472
Multiples of: 1

                   
STD5N20LT4


N-Channel 200 V 5A (Tc) 33W (Tc) Surface Mount DPAK
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STMicroelectronics 65475
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USD 0.4875
Multiples of: 1

5 A200 V700 mOhmsN - Channel 1 V- 55 C+ 150 C33 WSmd/SmtTO - 252ReelSi1 Channel5 V5 nCEnhancement Stripfet
STS9D8NH3LL


MOSFET Dual N Ch 30V 0.012Ohm 9A
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STMicroelectronics 49955
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USD 0.3129
Multiples of: 1

8 A30 V22 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel16 V Enhancement  
STB57N65M5


Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
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STMicroelectronics 44620
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USD 8.436
Multiples of: 1000

            Supermesh      
STD10NF30


MOSFET Automotive-grade N-channel 300 V, 0.28 Ohm typ., 10 A MESH OVERLAY Power MOSFET in a DPAK package
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STMicroelectronics 43650
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USD 0.7714
Multiples of: 2500

   N - Channel     Smd/SmtTO - 252 - 3 Si1 Channel   Aec - Q101Mesh Overlay
STL24N60M2


MOSFET N-CH 600V 0.186Ohm typ. 18A MDmesh II
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STMicroelectronics 43650
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USD 2.0656
Multiples of: 3000

18 A600 V186 mOhmsN - Channel25 V3 V  125 WSmd/SmtPowerflat - 4 8X8 HVReelSi1 Channel25 V29 nC  Mdmesh
STP240N10F7


STMicroelectronics MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
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STMicroelectronics 43650
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USD 2.075
Multiples of: 1

110 A100 V3.2 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi  160 nCEnhancement  
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