About MOSFET

Stmicroelectronics MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP75NF75


Transistor: N-MOSFET; unipolar; 75V; 70A; 300W; TO220-3
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STMicroelectronics 24820
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USD 0.5052
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STR2P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 23280
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USD 0.1171
Multiples of: 3000

2 A30 V56 mOhmsP - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V6 nCEnhancement Stripfet
STD5N60M2


STMicroelectronics MOSFET
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STMicroelectronics 21825
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USD 0.884
Multiples of: 2500

3.5 A600 V1.4 OhmsN - Channel+/- 25 V3 V- 55 C+ 150 C45 WSmd/SmtDPAK - 3Cut TapeSi1 Channel25 V8.5 nCEnhancement Mdmesh
STF24N65M2


N-Channel 650 V 16A (Tc) 30W (Tc) Through Hole TO-220FP
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STMicroelectronics 21340
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USD 1.3375
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16 A650 V185 mOhmsN - Channel25 V2 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3TubeSi1 Channel25 V29 nCEnhancement  
STT4P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 20370
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USD 0.2398
Multiples of: 3000

4 A30 V56 mOhmsP - Channel 1 V + 150 C1.6 WSmd/SmtSOT - 23 - 6ReelSi1 Channel- 10 V6 nCEnhancement Stripfet
STD100N3LF3


STMicroelectronics MOSFET N Ch 30V 0.0045 Ohm 80A
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STMicroelectronics 18448
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USD 1.161
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80 A30 V5.5 mOhmsN - Channel20 V - 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V EnhancementAec - Q101Stripfet
STL7N10F7


STMicroelectronics MOSFET
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STMicroelectronics 17460
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USD 0.4964
Multiples of: 3000

7 A100 V35 mOhmsN - Channel+/- 20 V4.5 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 4Cut TapeSi1 Channel20 V14 nCEnhancement Stripfet
STL7DN6LF3


MOSFET Dual N-Ch 60V 35mOhm 6.5A STripFET III
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STMicroelectronics 17460
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USD 0.9977
Multiples of: 3000

20 A60 V43 mOhmsN - Channel    52 WSmd/SmtPowerflat 5X6ReelSi2 Channel  EnhancementAec - Q101Stripfet
SCT1000N170


MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
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STMicroelectronics 17460
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USD 16.825
Multiples of: 1

                   
STD10P10F6


MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
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STMicroelectronics 16975
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USD 0.2625
Multiples of: 1

10 A100 V180 mOhmsP - Channel 2 V + 175 C40 WSmd/SmtDPAK - 3 -1 Channel+/- 20 V16.5 nCEnhancement  
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