About MOSFET

Rohm MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RU1C002ZPTCL


MOSFET 4V Drive Pch MOSFET Drive Pch
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 247920
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USD 0.0322
Multiples of: 1

200 mA- 20 V9.6 OhmsP - Channel - 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel+/- 10 V1.4 nCEnhancement  
RUC002N05HZGT116


MOSFET Nch 50V Vds 0.2A 2.4Rds(on) SOT-23
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ROHM 228566
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USD 0.0276
Multiples of: 1

200 mA50 V1.6 OhmsN - Channel 300 mV + 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V EnhancementAec - Q101 
UM6K33NTN


ROHM Semiconductor MOSFET
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ROHM 144341
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USD 0.0644
Multiples of: 1

200 mA50 V1.6 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 363 - 6Tape And ReelSi2 Channel8 V Enhancement  
RYM002N05T2CL


MOSFET .9V DRIVE N-Ch MOSFET
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ROHM 123100
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USD 0.0507
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200 mA50 V2.2 OhmsN - Channel8 V0.8 V- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel4.5 V Enhancement  
RZM002P02T2L


MOSFET TRANS MOSFET P-CH 20V 0.2A TR
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ROHM 121511
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USD 0.0471
Multiples of: 1

200 mA20 V1.2 OhmsP - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel- 4.5 V1.4 nCEnhancement  
RHP020N06T100


N-Channel 60 V 2A (Ta) 500mW (Ta) Surface Mount MPT3
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ROHM 113261
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USD 0.2466
Multiples of: 1

2 A60 V200 mOhmsN - Channel 1 V + 150 C2 WThrough HoleMPT3ReelSi1 Channel10 V7 nCEnhancement  
RQ5L015SPTL


P-Channel 60 V 1.5A (Ta) 1W (Ta) Surface Mount TSMT3
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ROHM 107714
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USD 0.153
Multiples of: 1

1.5 A60 V360 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346 - 3ReelSi1 Channel20 V10 nCEnhancement  
RUE003N02TL


N-Channel 20 V 300mA (Ta) 150mW (Ta) Surface Mount EMT3
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ROHM 94112
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USD 0.1153
Multiples of: 3000

300 mA20 V1 OhmsN - Channel  - 55 C+ 150 C150 mWSmd/SmtEMT - 3ReelSi1 Channel8 V Enhancement  
EM6J1T2R


ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6
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ROHM 11940
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USD 0.1181
Multiples of: 1

- 200 mA- 20 V1.2 OhmsP - Channel    150 mWSmd/SmtEMT - 6ReelSi2 Channel 1.4 nC   
RU1J002YNTCL


ROHM Semiconductor MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 5106
Ships to you
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USD 0.0287
Multiples of: 1

200 mA50 V2.2 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3ReelSi1 Channel4.5 V Enhancement  
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