About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN6140LQ-7


MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A
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Diodes Incorporated 1577220
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USD 0.0878
Multiples of: 3000

1.6 A60 V92 mOhmsN - Channel 1 V- 55 C+ 150 C700 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V8.6 nCEnhancementAec - Q101 
Hot SIR626ADP-T1-RE3


MOSFET N-Channel 60-V
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Vishay 1555414
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USD 0.9207
Multiples of: 1

165 A60 V1.75 mOhmsN - Channel 3.5 V- 55 C+ 150 C104 WSMD/SMT Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V55 nCEnhancement TrenchFET
BSC047N08NS3G


MOSFET N Channel 80V 18A 3.5V @ 90uA 4.7mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon 1455000
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USD 0.8575
Multiples of: 5000

                   
FDMB3900AN


Fairchild Semiconductor MOSFET 25V Dual N-Chanenl
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ON Semiconductor 1369744
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USD 0.423
Multiples of: 995

7 A25 V23 mOhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtMICRO - FET - 8 3X1.9ReelSi2 Channel  Enhancement Powertrench
DMN1019UFDE-7


MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
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Diodes Incorporated 1332780
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USD 0.167
Multiples of: 3000

11 A12 V10 mOhmsN - Channel 800 mV- 55 C+ 150 C690 mWSmd/SmtU - DFN2020 - E - 6Cut TapeSi1 Channel8 V27.3 nCEnhancement  
BSS123-TP


MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W
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Micro Commercial Components (MCC) 1280400
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USD 0.0156
Multiples of: 3000

0.17 A100 V6 OhmsN - Channel 1 V- 55 C+ 150 C0.35 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V1.4 nCEnhancement  
DMTH4005SPSQ-13


MOSFET 40V 175c N-Ch FET 3.7mOHm 10V 100A
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Diodes Incorporated 1071850
Ships to you
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USD 0.5906
Multiples of: 2500

20.9 A40 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel+/- 20 V49.1 nCEnhancementAec - Q101 
2N7002A-TP


MOSFET N-Ch 60Vds 30Vgs 40Vgsm 115mA 300mW
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Micro Commercial Components (MCC) 1065060
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USD 0.0131
Multiples of: 3000

                   
BSS123LT1G


MOSFET 100V 170mA N-Channel
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ON Semiconductor 966120
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USD 0.0366
Multiples of: 3000

170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
DMG1016UDWQ-7


Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
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Diodes Incorporated 896280
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USD 0.0707
Multiples of: 3000

   N/P    0.33 WSurface Mount Tape And Reel    Enhancement  
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