About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMZB290UNE2YL


N-Channel 20 V 1.2A (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3
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Nexperia 737200
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USD 0.034
Multiples of: 10000

1.2 A20 V320 mOhmsN - Channel 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006B - 3ReelSi1 Channel4.5 V0.8 nCEnhancement  
ZXMN2A01FTA


N-Channel 20 V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 715860
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USD 0.1
Multiples of: 3000

2.2 A20 V120 mOhmsN - channel 700 mV- 55 C+ 150 C625 mWSmd/smtSOT - 23ReelSi1 Channel4.5 V3 nCEnhancement  
NTH4L040N120M3S


MOSFET SIC MOS TO247-4L 40MOHM 1200V M3
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ON Semiconductor 684692
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USD 13.8843
Multiples of: 1

                   
AO3401A


MOSFET P Trench 30V 4A 1.3V @ 250uA 44 mΩ @ 4.3A,10V SOT-23-3L RoHS
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Alpha & Omega 671860
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USD 0.0435
Multiples of: 10

4 A  P    1.4 WSurface Mount      Enhancement  
2N7002,215


MOSFET N-CH TRNCH 60V 300MA
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Nexperia 655836
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USD 0.0144
Multiples of: 20

300 mA60 V2.8 OhmsN - Channel30 V1 V- 65 C+ 150 C830 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
ZXMN10A07FTA


N-Channel 100 V 700mA (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 646020
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USD 0.104
Multiples of: 3000

800 mA100 V700 mOhmsN - channel 2 V- 55 C+ 150 C806 mWSmd/smtSOT - 23ReelSi1 Channel10 V2.9 nCEnhancement  
IPB039N10N3 G


MOSFET N-Channel MOSFET 20-200V
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Infineon 630500
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USD 1.4893
Multiples of: 1000

160 A100 V3.9 mOhmsN - Channel 2 V- 55 C+ 175 C214 WSmd/SmtTO - 263 - 7ReelSi1 Channel10 V88 nCEnhancement Optimos
DMN6140L-7


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated 611100
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USD 0.0374
Multiples of: 3000

2.3 A60 V140 mOhmsN - Channel20 V3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V8.6 nCEnhancement  
MMBF170-7-F


N-Channel 60 V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 602370
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USD 0.0195
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
2N7002BKS,115


Mosfet Array 2 N-Channel (Dual) 60V 300mA 295mW Surface Mount 6-TSSOP
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Nexperia 142590
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USD 0.0462
Multiples of: 3000

300 mA60 V2.8 OhmsN - Channel    830 mWSmd/SmtSOT - 23 - 3Reel       
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