About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ3427AEEV-T1_GE3


MOSFET -60V Vds -20V Vgs AEC-Q101 Qualified
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Vishay 597134
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USD 0.2841
Multiples of: 1

5.3 A60 V95 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V15.3 nCEnhancementAEC - Q101TrenchFET
DMG2305UX-13


MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
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Diodes Incorporated 591700
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USD 0.0401
Multiples of: 10000

- 4.2 A- 20 V52 mOhmsP - Channel8 V- 0.9 V- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Reel   10.2 nCEnhancement  
SPD15P10PLGBTMA1


Infineon Technologies MOSFET P-Ch -100V 15A DPAK-2
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Infineon 589275
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USD 0.8523
Multiples of: 2500

15 A100 V200 mOhmsP - Channel 2 V- 55 C+ 175 C128 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V47 nCEnhancement  
SI2312BDS-T1-GE3


N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 588075
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USD 0.1828
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   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel      Trenchfet
2N7002LT3G


MOSFET 60V 115mA N-Channel
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ON Semiconductor 582000
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USD 0.0206
Multiples of: 10000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
SQS401ENW-T1_GE3


MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
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Vishay 557373
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USD 0.4264
Multiples of: 1

16 A40 V20 mOhmsP - Channel 2.5 V- 55 C+ 175 C62.5 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V21.2 nCEnhancementAec - Q101Trenchfet
BSS84PW H6327


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 541922
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USD 0.0403
Multiples of: 1

- 150 mA- 60 V8 OhmsP - Channel+/- 20 V- 1.5 V- 55 C+ 150 C300 mWSmd/SmtPG - SOT - 323Reel-1 Channel20 V1 nCEnhancementAec - Q101 
SQ2389ES-T1_BE3


MOSFET P-CHANNEL 40V D-S
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Vishay 529065
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USD 0.2495
Multiples of: 1

           Cut Tape       
DMG7401SFGQ-7


MOSFET P-Ch Enh Mode FET 30Vdss 25Vgss
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Diodes Incorporated 522146
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USD 0.2375
Multiples of: 1

- 9.8 A- 30 V9 mOhmsP - Channel - 3 V- 55 C+ 150 C940 mWSmd/SmtPowerdi3333 - 8ReelSi1 Channel+/- 25 V41 nCEnhancementAec - Q101 
DMN65D8LFB-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K
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Diodes Incorporated 485000
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USD 0.0386
Multiples of: 10000

400 mA60 V3 OhmsN - Channel20 V2 V- 55 C+ 150 C430 mWSmd/SmtX1 - DFN1006 - 2ReelSi1 Channel10 V Enhancement  
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