DMP213DUFA 25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application I D V R 2 (BR)DSS DS(ON) 0.48mm Package Footprint, 16 Times Smaller than SOT23 T = +25 C A 10 V = -4.5V -166mA Low V Can be Driven Directly From a Battery GS GS(th), -25V 13 V = -2.7V -138mA GS Low R DS(on) ESD Protected Gate (>6kV Human Body Mode) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: X2-DFN0806-3 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 Portable Applications Terminals: Finish NiPdAu over Copper leadframe. Solderable Power Management Functions e4 per MIL-STD-202, Method 208 Weight: 0.00043 grams (approximate) Drain X2-DFN0806-3 Body Diode Gate Gate Protection ESD HBM >6kV Diode Source Top View Bottom View Equivalent Circuit Package Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP213DUFA-7B X2-DFN0806-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP213DUFA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -25 DSS V Gate-Source Voltage V -8 GSS (Note 6) -166 I mA D -125 Continuous Drain Current T = +70C (Note 6) V = 4.5V A GS -145 (Note 5) I mA D Pulsed Drain Current (Note 7) I -500 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 360 mW D Thermal Resistance, Junction to Ambient (Note 5) R 353 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -25 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -20V, V = 0V DSS DS GS Gate-Source Leakage I -100 nA V = -8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.65 -0.9 -1.5 V V = V , I = -250A GS(th) DS GS D 10 V = -4.5V, I = -0.2A GS D Static Drain-Source On-Resistance R DS(on) 13 V = -2.7V, I = -0.05A GS D Forward Transfer Admittance 189 S Y V = -5V, I = -0.2A fs DS D Diode Forward Voltage -1.5 V V V = 0V, I = -0.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 27.2 pF C iss V = -10V, V = 0V, DS GS Output Capacitance 6.1 pF C oss f = 1MHz Reverse Transfer Capacitance C 1.7 pF rss Total Gate Charge Q 0.35 nC g V = -5V, I = -0.2A, DS D Gate-Source Charge Q 0.08 nC gs V = -4.5V GS Gate-Drain Charge Q 0.06 nC gd Turn-On Delay Time t 4.5 ns D(on) Turn-On Rise Time t 2.3 ns r V = -6V, V = -4.5V, DS GS Turn-Off Delay Time 24.1 ns I = -0.2A, R = 50 t D G D(off) Turn-Off Fall Time 11 ns t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 July 2014 DMP213DUFA Diodes Incorporated www.diodes.com Document number: DS36466 Rev. 1 - 2