About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
60N02


20V 60A 6mΩ 1.1V N Channel TO-252 MOSFETs ROHS
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HL Availability : 8133
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USD 0.0442

Multiples of: 5

                   
FDMS86368_F085


MOSFET N-Channel PowerTrench MOSFET 80V, 80A, 4.5 mO
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ON Semiconductor Availability : 8130
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USD 1.0173

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80 A80 V9 mOhmsn - channel 2 V- 55 C+ 175 C214 Wsmd/smtPOWER - 56 - 8Reelsi1 channel+/- 20 V57 nCenhancement powertrench
DMN601K-7


60V 300mA 2O@10V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 8128
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USD 0.0202

Multiples of: 20

   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
IRFR9310TRPBF


P-Channel 400 V 1.8A (Tc) 50W (Tc) Surface Mount D-Pak
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Vishay Availability : 8125
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USD 0.4496

Multiples of: 1

1.8 A400 V7 OhmsP - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V13 nCEnhancement  
IPD50R380CEAUMA1


MOSFET CONSUMER
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Infineon Availability : 8124
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USD 0.4525

Multiples of: 1

           Cut Tape       
ISC015N04NM5ATMA1


MOSFET TRENCH <= 40V
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Infineon Availability : 8118
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USD 0.5621

Multiples of: 1

           Cut Tape       
Hot IRF5305PBF


MOSFET P Trench 55V 31A 4V @ 250uA 60 mΩ @ 16A,10V TO-220 (TO-220-3) RoHS
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Infineon Availability : 8111
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USD 0.3418

Multiples of: 1

   P - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
BSS123X


100V 170mA 6@10V 1PCSNChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang Availability : 8109
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USD 0.0174

Multiples of: 20

                   
TX20N03


TO-252 MOSFETs ROHS
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XDS Availability : 8104
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USD 0.053

Multiples of: 5

                   
STD30NF06LT4


Transistor: N-MOSFET; unipolar; 60V; 25A; 70W; DPAK
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STMicroelectronics Availability : 8099
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USD 0.6225

Multiples of: 1

            Supermesh      
2N7002KPW-AQ


MOSFETs MOSFET, SOT-323, 60V, 0.31A, 150C, N, AEC-Q101
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Diotec Availability : 8098
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USD 0.0275

Multiples of: 1

310 mA60 V1.6 OhmsN - Channel 2.1 V + 150 C310 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.1 nCEnhancementAEC - Q101 
IRF3710PBF


MOSFET N Trench 100V 57A 4V @ 250uA 23 mΩ @ 28A,10V TO-220 (TO-220-3) RoHS
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Infineon Availability : 8091
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USD 0.2637

Multiples of: 1

            Hexfet®      
AP8810


MOSFET 2 N Channel(Double)Common Drain 20V 7A 1V @ 250uA 20 mΩ @ 6A,4.5V SOT23-6 RoHS
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Quan Li Availability : 8089
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USD 0.131

Multiples of: 5

                   
IPD35N10S3L-26


Infineon Technologies MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
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Infineon Availability : 8087
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USD 0.6633

Multiples of: 1

35 A100 V26 mOhmsN - Channel 1.2 V- 55 C+ 175 C71 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V30 nCEnhancementAec - Q101Optimos
Hot EM6M2T2R


ROHM Semiconductor MOSFET 1.2V Drive NchPch MOSFET
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ROHM Availability : 8084
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USD 0.042

Multiples of: 5

200 mA20 V700 mOhmsN - Channel, P - Channel10 V300 mV- 55 C+ 150 C150 mWSmd/SmtEMT - 6ReelSi2 Channel- 4.5 v , 4 V Enhancement  
DMP4050SSS-13


MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A
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Diodes Incorporated Availability : 8083
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USD 0.2596

Multiples of: 1

4.4 A40 V50 mOhmsP - Channel 1 V- 55 C+ 150 C1.56 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V13.9 nCEnhancement  
IRFIZ24NPBF


Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
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Infineon Availability : 8082
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USD 0.546

Multiples of: 1

13 A55 V70 mOhmsN - Channel    26 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V13.3 nC   
BSP322PH6327


Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
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Infineon Availability : 8062
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USD 0.2552

Multiples of: 1

            Sipmos      
VN10LFTA


60V 150mA 5O@10V,500mA 330mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 8058
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USD 0.1903

Multiples of: 1

150 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
SQ4937EY-T1_GE3


MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
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Vishay Availability : 8057
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USD 0.5249

Multiples of: 1

5 A30 V56 mOhms , 56 mOhmsP - Channel 2.5 V- 55 C+ 175 C3.3 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V15 nC , 15 nCEnhancementAec - Q101Trenchfet
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