BSP322P SIPMOS Small-Signal-Transistor Product Summary Features V -100 V DS P-Channel R 800 mW DS(on),max Enhancement mode I -1 A D Logic level Avalanche rated PG-SOT-223 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSP322P PG-SOT-223 H6327: 1000 pcs/reel BSP322P Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 1 A D C T =70C 0.8 C I T =25C 4 Pulsed drain current D,pulse C E I =-1A, R =25W 57 Avalanche energy, single pulse mJ AS D GS Gate source voltage V 20 V GS P T =25C Power dissipation 1.8 W tot C T , T -55 ... 150 Operating and storage temperature C j stg 1A (250V to 500V) ESD Class JESD22-A114-HBM Soldering temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 1.05 page 1 2012-11-28BSP322P Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, minimal footprint, R - - 115 K/W thJA junction - ambient steady state 2 1) 6 cm cooling area , - - 70 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =-250 mA -100 - - V (BR)DSS GS D V V =V ,I =-380A Gate threshold voltage -2.0 -1.5 -1.0 GS(th) DS GS D V =-100V, V =0V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25C j V =-100V, V =0V, DS GS - -10 -100 T =150C j I V =-20V, V =0V Gate-source leakage current - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =-10V, I =-1A - 600 800 mW DS(on) GS D V =-4.5V, GS - 808 1000 I =-0.93A D V >2 I R , DS D DS(on)max g Transconductance 0.7 1.4 - S fs I =-0.8A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 1.05 page 2 2012-11-28