About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK3018W


SOT-323 MOSFETs ROHS
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FUXINSEMI Availability : 7016
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USD 0.0123

Multiples of: 20

                   
AO4407-HXY


30V 12A 15mΩ@10V,10A 2.5W P Channel SOP-8 MOSFETs ROHS
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HXY MOS Availability : 7015
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USD 0.0751

Multiples of: 5

                   
SI4842BDY-T1-E3


MOSFET 30V 23A 3.5W
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Vishay Availability : 7009
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USD 1.144

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel      Trenchfet
TPM3415ES3


20V 4A 29mΩ@4.5V,4A 1.4W 650mV@250uA 114.8pF@10V P Channel 1.1811nF@10V 10.2nC@4.5V -55℃~+150℃@(Tj) SOT-23-3 MOSFETs ROHS
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TECH PUBLIC Availability : 6997
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USD 0.0362

Multiples of: 10

                   
CSD23203W


Texas Instruments MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA
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Texas Instruments Availability : 6997
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USD 0.1449

Multiples of: 1

3 A8 V53 mOhmsP - channel 1.1 V- 55 C+ 150 C750 mWSmd/SmtDSBGA - 6ReelSi1_Channel- 6 V6.3 nCEnhancement Nexfet
SH8K25GZ0TB1


MOSFET LOW POWER MOSFET
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ROHM Availability : 6996
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USD 0.4871

Multiples of: 1

5.2 A40 V85 mOhmsN - Channel 2.5 V- 55 C+ 150 C3 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 12 V , + 12 V1.7 nCEnhancement  
BSS138W-TP


MOSFET N-Channel MOSFET, SOT-323 package
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Micro Commercial Components (MCC) Availability : 6989
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USD 0.0275

Multiples of: 1

220 mA50 V3.5 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel20 V Enhancement  
IRF9530STRLPBF


P-Channel 100 V 12A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
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Vishay Availability : 6984
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USD 1.0062

Multiples of: 800

   P - Channel  - 55 C+ 175 C Smd/SmtD2PAK - 2Reel       
SP3023CNJ


30V 1 N-Channel + 1 P-Channel PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Siliup Availability : 6982
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USD 0.0779

Multiples of: 5

                   
KIA3400


MOSFET N Trench 30V 4.8A 600mV @ 250uA(Min) 40 mΩ @ 4.8A,10V SOT-23 (SOT-23-3) RoHS
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KIA Availability : 6979
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USD 0.0344

Multiples of: 10

                   
2N7002DW-TP


Mosfet Array 2 N-Channel (Dual) 60V 115mA 200mW Surface Mount SOT-363
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Micro Commercial Components (MCC) Availability : 6977
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USD 0.0759

Multiples of: 1

115 mA60 V13.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel  Enhancement  
DMT10H025SSS-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated Availability : 6977
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USD 0.2233

Multiples of: 1

7.4 A100 V23 mOhmsN - Channel 2 V- 55 C+ 150 C12.9 WSmd/SmtSO - 8 Si1 Channel10 V21.4 nCEnhancement  
AO3406


30V 3.5A 40mΩ@10V,3.5A 750mW N Channel SOT-23-3L MOSFETs ROHS
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Yongyutai Electronics Availability : 6975
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USD 0.0271

Multiples of: 10

                   
FDN304P


SOT-23 MOSFETs ROHS
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TECH PUBLIC Availability : 6975
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USD 0.0314

Multiples of: 10

                   
SH8MA3TB1


MOSFET 30V NCH+PCH POWER
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ROHM Availability : 6971
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USD 0.3861

Multiples of: 1

7 A , 6 A30 V28 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2.8 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V7.2 nC , 10 nCEnhancement  
IAUC45N04S6N070HATMA1


Mosfet Array 2 N-Channel (Half Bridge) 40V 45A (Tj) 41W (Tc) Surface Mount PG-TDSON-8-57
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Infineon Availability : 6971
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USD 0.4796

Multiples of: 1

55 A40 V7 mOhmsN - Channel 3 V- 55 C+ 175 C41 WSMD/SMTTDSON - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V9 nCEnhancement OptiMOS
SI2329DS


SOT-23-3L MOSFETs ROHS
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TECH PUBLIC Availability : 6969
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USD 0.0651

Multiples of: 5

                   
IRLHS6242TRPBF


Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
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Infineon Availability : 6969
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USD 0.1474

Multiples of: 1

22 A20 V11.7 mOhmsN - Channel 1.1 V- 55 C+ 150 C9.6 WSmd/SmtPQFN - 6ReelSi1 Channel12 V14 nCEnhancement  
IRFU024PBF


N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay Availability : 6962
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USD 0.7777

Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleIPAKTube       
FDN5618P


MOSFET SSOT-3 P-CH 60V
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ON Semiconductor Availability : 6241
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USD 0.0939

Multiples of: 5

1.2 A60 V170 mOhmsP - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSSOT - 3Cut TapeSi1 Channel20 V Enhancement Powertrench
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