SI4842BDY-T1-E3 Vishay

SI4842BDY-T1-E3 electronic component of Vishay
SI4842BDY-T1-E3 Vishay
SI4842BDY-T1-E3 MOSFETs
SI4842BDY-T1-E3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4842BDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4842BDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI4842BDY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 23A 3.5W
Intertechnologies High-frequency, low-noise, dual-gate MOSFET in an SOT-223 package.
Datasheet: SI4842BDY-T1-E3 Datasheet (PDF)
Price (USD)
1: USD 2.7875 ea
Line Total: USD 2.79 
Availability : 6953
  
Ship by Mon. 11 Aug to Wed. 13 Aug
QtyUnit Price
1$ 2.7875
10$ 2.076
100$ 1.441
500$ 1.254
1000$ 1.166
2500$ 1.133
5000$ 1.1

Availability 6953
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.7875
10$ 2.076
100$ 1.441
500$ 1.254
1000$ 1.166
2500$ 1.133
5000$ 1.1

   
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RoHS - XON
Icon ROHS
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We are delighted to provide the SI4842BDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4842BDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI4842BDY-T1-E3 is an N-channel enhancement-mode field-effect transistor (FET) with low-on-resistance. It has an SOT-463 package and is a lead (Pb)-free device. It has an operating temperature range of -55 to +150 °C and drain-source voltage of 30 V. The maximum drain current is 56 mA and its maximum power dissipation is 390 mW. The gate-source voltage is ±20 V and its threshold voltage is 1.5 V. It is designed for use in small signal, general-purpose switching, power management, and LED lighting applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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