About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ018NE2LSI


Infineon Technologies MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 63912
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USD 0.9407

Multiples of: 1

40 A25 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8-Si1 Channel20 V48 nCEnhancement Optimos
DMG1012UW-7


MOSFET MOSFET N-CHANNEL SOT-323
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Diodes Incorporated Availability : 63651
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USD 0.0216

Multiples of: 20

1 A20 V450 mOhmsN - Channel 500 mV- 55 C+ 150 C290 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel4.5 V736.6 pCEnhancement  
BSO220N03MDGXUMA1


Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
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Infineon Availability : 63646
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USD 0.2739

Multiples of: 1

            Optimos 3      
ZVN3306ASTZ


Trans MOSFET N-CH 60V 0.27A 3-Pin E-Line T/R
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Diodes Incorporated Availability : 63593
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USD 0.4856

Multiples of: 1

270 mA60 V5 OhmsN - Channel20 V - 55 C+ 150 C625 mWThrough HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
SI2318DS-T1-BE3


MOSFET N-CHANNEL 40-V (D-S)
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Vishay Availability : 63592
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USD 0.2108

Multiples of: 1

3 A40 V45 mOhmsN - Channel 3 V- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V10 nCEnhancement  
SI4134DY-T1-E3


MOSFET 30V 14A 5.0W 14mohm @ 10V
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Vishay Availability : 63554
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USD 0.275

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
AO3415A


MOSFET P Trench 20V 4A 1V @ 250uA 50 mΩ @ 4A,4.5V SOT-23 RoHS
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Youtai Availability : 63457
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USD 0.0205

Multiples of: 20

                   
PJA3461_R1_00001


MOSFET /A61/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-60TMP/NF60T-QI05/PJ///
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Panjit Availability : 63005
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USD 0.1147

Multiples of: 1

           Cut Tape       
PMV28XPEAR


MOSFET MOS DISCRETES
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Nexperia Availability : 62988
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USD 0.0896

Multiples of: 1

           Cut Tape       
TN2404K-T1-E3


MOSFET 240V 0.2A 4.0Ohm
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Vishay Availability : 62890
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USD 0.3168

Multiples of: 1

200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
BSS84


60V 170mA 8@10V,0.17A 225mW 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng Availability : 62807
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USD 0.0104

Multiples of: 50

                   
SI2301A


MOSFET P Trench 20V 2.8A 1V @ 250uA 142 mΩ @ 2A,2.5V SOT-23 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Youtai Availability : 62662
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USD 0.0093

Multiples of: 50

                   
ZXMN3A14FTA


N-Channel 30 V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated Availability : 62603
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USD 0.2346

Multiples of: 1

3.9 A30 V95 mOhmsN - channel20 V - 55 C+ 150 C1 WSmd/smtSOT - 23 - 3ReelSi1 Channel20 V Enhancement  
SI2302


MOSFET SOT23 RoHS
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TWGMC Availability : 62455
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USD 0.0146

Multiples of: 20

                   
2N7002


60V 115mA 225mW 2Ω@10V,100mA N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics Availability : 62274
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USD 0.0046

Multiples of: 100

                   
UMW15N10


MOSFET N Trench 100V 20A (Tc) 2.5V @ 250uA 80 mΩ @ 10A,10V TO-252 RoHS
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Youtai Availability : 62156
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USD 0.0925

Multiples of: 5

                   
SI2301


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics Availability : 62090
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USD 0.0113

Multiples of: 20

                   
ZXMP6A13FQTA


Diodes Incorporated MOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF
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Diodes Incorporated Availability : 60632
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USD 0.1562

Multiples of: 1

- 1.1 A- 60 V400 mOhmsP - channel - 3 V- 55 C+ 150 C806 mWSmd/smtSOT23Reel-1 Channel+/- 20 V2.9 nCEnhancementAec - Q101 
PSMN014-40YS,115


MOSFET N-CHAN 40V 32A
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Nexperia Availability : 60233
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USD 0.2332

Multiples of: 1

32 A40 V14 mOhmsN - Channel  - 55 C+ 175 C56 WSmd/SmtLFPAKReelSi1 Channel20 V    
SI2399DS-T1-GE3


Vishay Semiconductors MOSFET -20V -6A 2.5W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay Availability : 58200
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USD 0.1637

Multiples of: 3000

6 A20 V34 mOhmsP - Channel 600 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V10 nCEnhancement Trenchfet
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