X-On Electronics has gained recognition as a prominent supplier of SI2318DS-T1-BE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2318DS-T1-BE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2318DS-T1-BE3 Vishay

SI2318DS-T1-BE3 electronic component of Vishay
SI2318DS-T1-BE3 Vishay
SI2318DS-T1-BE3 MOSFETs
SI2318DS-T1-BE3  Semiconductors

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See Product Specifications
Part No. SI2318DS-T1-BE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-CHANNEL 40-V (D-S)
Datasheet: SI2318DS-T1-BE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6238 ea
Line Total: USD 0.62 
Availability - 59666
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
59666
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6238
10 : USD 0.46
100 : USD 0.3105
500 : USD 0.2431
1000 : USD 0.1969
3000 : USD 0.1804
6000 : USD 0.1771
9000 : USD 0.1727

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2318DS-T1-BE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2318DS-T1-BE3 and other electronic components in the MOSFETs category and beyond.

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Si2318DS Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.045 at V = 10 V 3.9 GS TrenchFET Power MOSFET 40 0.058 at V = 4.5 V 3.5 GS APPLICATIONS Stepper Motors Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2318DS( C8)* *Marking Code Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free) Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 40 DS V Gate-Source Voltage V 20 GS T = 25 C 3.9 3.0 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C 3.1 2.4 A A b I 16 Pulsed Drain Current DM a, b I 0.8 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A a, b P W Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature Document Number: 72322 www.vishay.com S09-0130-Rev. B, 02-Feb-09 1Si2318DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 (BR)DSS GS D V V V = V , I = 250 A Gate-Threshold Voltage 13 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 32 V, V = 0 V 0.5 DS GS Zero Gate Voltage Drain Current I A DSS V = 32 V, V = 0 V, T = 55 C 10 DS GS J a I V 4.5 V, V = 10 V 6A On-State Drain Current D(on) DS GS V = 10 V, I = 3.9 A 0.036 0.045 GS D a R Drain-Source On-Resistance DS(on) V = 4.5 V, I = 3.5 A 0.045 0.058 GS D a g V = 10 V, I = 3.9 A 11 S Forward Transconductance fs DS D V I = 1.25 A, V = 0 V Diode Forward Voltage 0.8 1.2 V SD S GS b Dynamic Total Gate Charge Q 10 15 g Q V = 20 V, V = 10 V, I = 3.9 A Gate-Source Charge 1.6 nC gs DS GS D Gate-Drain Charge Q 2.1 gd R Gate Resistance 1.8 g C Input Capacitance 540 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 80 pF oss DS GS C Reverse Transfer Capacitance 45 rss Switching t Turn-On Delay Time 510 d(on) t Rise Time V = 20 V, R = 20 12 20 r DD L ns I 1.0 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN G 20 30 d(off) t Fall Time 15 25 f Notes: a. Pulse test PW 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 10 V thru 5 V GS 4 V 16 16 12 12 8 8 T = 125 C C 4 4 1 V, 2 V 25 C 3 V - 55 C 0 0 02468 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source V oltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72322 2 S09-0130-Rev. B, 02-Feb-09 I - Drain Current (A) D I - Drain Current (A) D

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