About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMTH6016LFDFWQ-7R


MOSFET MOSFET BVDSS: 41V-60V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 76110
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USD 0.2857

Multiples of: 1

9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancementAec - Q101 
SIA483ADJ-T1-GE3


MOSFET P-Channel 30 V D-S MOSFET
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Vishay Availability : 75925
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USD 0.1295

Multiples of: 1

12 A30 V16 mOhmsP - Channel 5 V- 55 C+ 150 C17.9 WSmd/SmtPOWERPAK SC - 70Cut TapeSi1 Channel- 20 v , 16 V17 nCEnhancement Trenchfet
DMG2302UK-7-ES


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper Availability : 75803
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USD 0.0094

Multiples of: 10

                   
DMN63D8L-7


MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
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Diodes Incorporated Availability : 75660
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USD 0.0208

Multiples of: 3000

350 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C520 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.9 nCEnhancement  
BSL316CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
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Infineon Availability : 75660
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USD 0.1225

Multiples of: 3000

            Optimos 2      
FDMS3664S


MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
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ON Semiconductor Availability : 75660
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USD 0.7075

Multiples of: 3000

13 A , 25 A30 V8 mOhms , 2.6 mOhmsn - channel  - 55 C+ 150 C2.2 w , 2.5 Wsmd/smtPOWER 56Reelsi2 channel20 v , 12 V   power stage powertrench
SI3430DV-T1-BE3


N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
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Vishay Availability : 75564
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USD 0.6578

Multiples of: 1

          SOT - 23 - 6 TH in , TSOT - 23 - 6Tape And ReelMosfet (Metal Oxide)      
SI2302DDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay Availability : 75290
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USD 0.1478

Multiples of: 1

2.9 A20 V57 mOhmsN - Channel 850 mV- 55 C+ 150 C860 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.5 nCEnhancement  
ZXMN2F34FHTA


MOSFET 20V N-Channel Enhance. Mode MOSFET
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Diodes Incorporated Availability : 74596
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USD 0.1089

Multiples of: 1

4 A20 V60 mOhmsN - Channel 500 mV- 55 C+ 150 C950 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V2.8 nCEnhancement  
IRF640NPBF


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 11A,10V TO-220 (TO-220-3) RoHS
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Infineon Availability : 74253
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USD 0.1527

Multiples of: 5

18 A200 V150 mOhmsN - Channel  - 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V44.7 nCEnhancement  
AP2301


MOSFET P Trench 20V 3A 1V @ 250uA 110 mΩ @ 3A,4.5V SOT-23 RoHS
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Quan Li Availability : 73708
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USD 0.026

Multiples of: 20

                   
FDC6304P


MOSFET SSOT-6 P-CH -25V
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ON Semiconductor Availability : 73422
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USD 0.3268

Multiples of: 1

460 mA25 V1.5 Ohmsp - channel  - 55 C+ 150 C900 mWsmd/smtSSOT - 6Reelsi2 channel- 8 V enhancement  
DMP1046UFDB-13


Diodes Incorporated MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC
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Diodes Incorporated Availability : 73219
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USD 0.1177

Multiples of: 1

3.8 A12 V37 mOhms , 37 mOhmsP - Channel 1 V- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - B - 6ReelSi2 Channel8 V17.9 nC , 17.9 nCEnhancement  
BSS138PS,115


Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
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Nexperia Availability : 72934
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USD 0.0243

Multiples of: 10

320 mA60 V1.6 OhmsN - Channel 900 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel10 V0.8 nCEnhancement  
BSS159NH6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
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Infineon Availability : 72750
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USD 0.0861

Multiples of: 3000

            Sipmos      
MCH3322-TL-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor Availability : 72750
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USD 0.128

Multiples of: 1

                   
PMV33UPE,215


NXP Semiconductors MOSFET 20V P-Channel Trench Mosfet
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Nexperia Availability : 72750
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USD 0.1462

Multiples of: 1

- 5.3 A- 20 V30 mOhmsP - Channel - 950 mV- 55 C+ 150 C980 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V14.7 nCEnhancement  
MCH3475-TL-E


N-Channel 30 V 1.8A (Ta) 800mW (Ta) Surface Mount SC-70FL/MCPH3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 72750
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USD 24.625

Multiples of: 1

1.8 A30 V180 mOhmsn - channel  - 55 C+ 150 C800 mWsmd/smtSOT - 323 - 3Reelsi1 channel20 V2 nC   
FQD7P20TM


mosfet p trench 200v 5.7a (tc) 5v @ 250ua 690 m @ 2.85a,10v to-252-3 rohs
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ON Semiconductor Availability : 2425
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USD 0.4756

Multiples of: 2500

   P Channel               
BUK9880-55ACUX


NXP Semiconductors MOSFET N-channel TrenchMOS logic level FET
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Nexperia Availability : 215
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USD 0.2735

Multiples of: 1

7 A55 V73 mOhmsN - Channel 1 V- 55 C+ 150 C8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel10 V11 nCEnhancement  
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