About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
Manufacturer
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2329DS-T1-GE3


MOSFET -8V Vds 5V Vgs SOT-23
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay Availability : 37830
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USD 0.1365

Multiples of: 3000

6 A8 V30 mOhmsP - Channel 350 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V19.3 nCEnhancement Trenchfet
STL45N65M5


STMicroelectronics MOSFET N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh
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STMicroelectronics Availability : 37830
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USD 3.8312

Multiples of: 3000

22.5 A650 V75 mOhmsN - Channel 4 V- 55 C+ 150 C160 WSmd/SmtPowerflat - 4ReelSi1 Channel25 V82 nCEnhancement Mdmesh
SK2302AA


MOSFET N Trench 18V 3.6A 1.3V@ 250uA 80 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Shikues Availability : 37791
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USD 0.0168

Multiples of: 20

                   
CMKDM8005 TR


MOSFET DUAL P-CHANNEL MOSFET
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Central Semiconductor Availability : 37769
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USD 0.1878

Multiples of: 1

   P - Channel     Smd/SmtSOT - 363Cut TapeSi2 Channel     
SI3437DV-T1-BE3


MOSFET P-CHANNEL 150-V (D-S)
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Vishay Availability : 37713
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USD 0.4616

Multiples of: 1

1.4 A150 V750 mOhmsP - Channel 4 V- 55 C+ 150 C3.2 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V8 nCEnhancement  
BSZ520N15NS3 G


MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
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Infineon Availability : 37655
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USD 0.627

Multiples of: 1

21 A150 V42 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V12 nCEnhancement Optimos
PMV19XNEAR


30V 6A 24mO@6A,4.5V null SOT-23 MOSFETs ROHS
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Nexperia Availability : 37585
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USD 0.1034

Multiples of: 1

6 A30 V24 mOhmsN - Channel 900 mV- 55 C+ 175 C610 mWSMD/SMTSOT23 (TO - 236AB)Cut Tape , Reel , ReelSi1 Channel- 8 V , + 8 V12.4 nCEnhancement  
DMT3006LFDF-7


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated Availability : 37534
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USD 0.1584

Multiples of: 1

         Smd/SmtU - DFN2020 - F - 6Cut TapeSi      
BSS84P H6433


Infineon Technologies MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon Availability : 37401
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USD 0.0429

Multiples of: 1

- 170 mA- 60 V8 OhmsP - Channel - 1.5 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT - 23Reel-1 Channel+/- 20 V1 nCEnhancement  
BSP296NH6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
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Infineon Availability : 37155
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USD 0.22

Multiples of: 1

            Optimos      
DMN67D8LW-13


60V 240mA 320mW 5O@10V,500mA N Channel SOT-323-3 MOSFETs ROHS
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Diodes Incorporated Availability : 37106
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USD 0.0286

Multiples of: 1

         Smd/SmtSOT - 323 - 3Cut TapeSi      
BSS138


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 37054
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USD 0.0074

Multiples of: 50

                   
BSZ160N10NS3 G


MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
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Infineon Availability : 37034
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USD 0.7061

Multiples of: 1

40 A100 V14 mOhmsN - Channel 2 V- 55 C+ 150 C63 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V25 nCEnhancement Optimos
SSM3K7002KFU,LF(T


Transistor: N-MOSFET; unipolar; 60V; 400mA; 150mW; SC70
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Toshiba Availability : 36981
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USD 0.0546

Multiples of: 5

                   
TPH4R606NH,L1Q(M


Trans MOSFET N-CH Si 60V 85A 8-Pin SOP Advance
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Toshiba Availability : 36979
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USD 0.4776

Multiples of: 1

                   
BSS138W


50V 220mA 3.5@10V,0.22A 300mW 1.5V@250uA 1 N-Channel SOT-323 MOSFETs ROHS
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hongjiacheng Availability : 36976
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USD 0.0124

Multiples of: 20

                   
SI3483CDV-T1-BE3


MOSFET P-CHANNEL 30-V (D-S)
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Vishay Availability : 36927
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USD 0.4236

Multiples of: 1

8 A30 V34 mOhmsP - Channel 1 V- 55 C+ 150 C4.2 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement  
IPT020N10N3ATMA1


Transistor: N-MOSFET; unipolar; 100V; 212A; 375W; PG-HSOF-8-1
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Infineon Availability : 36860
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USD 1.7013

Multiples of: 2000

            Optimos 3      
FDN359BN


MOSFET 30V N-Channel PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 34920
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USD 0.1359

Multiples of: 3000

2.7 A30 V46 mOhmsN - Channel  - 55 C+ 150 C500 mWSmd/SmtSSOT - 3ReelSi1 Channel20 V Enhancement  
FDB0170N607L


MOSFET 60V TO263 7L JEDEC GREEN EMC
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ON Semiconductor Availability : 31040
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USD 2.491

Multiples of: 800

300 A60 V3.5 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V173 nCEnhancement  
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