About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQP13N06L


Transistor: N-MOSFET; unipolar; 60V; 9.6A; 45W; TO220AB
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ON Semiconductor Availability : 36823
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USD 0.525

Multiples of: 1

            Qfet®      
BSC0804LSATMA1


MOSFET TRENCH >=100V
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Infineon Availability : 36801
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USD 0.8627

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           Cut Tape       
MCH3486-TL-H


ON Semiconductor MOSFET NCH 4V DRIVE SERIES
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ON Semiconductor Availability : 36763
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USD 0.1919

Multiples of: 1

2 A60 V105 mOhmsN - Channel 1.2 V- 55 C+ 150 C1 WSmd/SmtSOT - 323 - 3ReelSi1 Channel20 V7 nCEnhancement  
SI2305


MOSFET SOT23 RoHS
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TWGMC Availability : 36692
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USD 0.0304

Multiples of: 10

                   
AO3400A


30V 5.8A 1PCSNChannel SOT-23-3L MOSFETs ROHS
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GOODWORK Availability : 36530
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USD 0.02

Multiples of: 20

                   
NVJD5121NT1G


ON Semiconductor MOSFET NFET SC88 60V 295MA 1.6OH
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ON Semiconductor Availability : 36415
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USD 0.0737

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300 mA60 V1 OhmsN - Channel 1 V- 55 C+ 175 C300 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V900 pCEnhancementAec - Q101 
FDS4897AC


Transistor: N/P-MOSFET; unipolar; 40/-40V; 6.1/5.2A; 2W; SO8
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ON Semiconductor Availability : 36375
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USD 0.1071

Multiples of: 2500

            powertrench®      
IPD50N04S410ATMA1


Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
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Infineon Availability : 36375
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USD 0.3042

Multiples of: 2500

                   
SSM3J332R,LF


MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS
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Toshiba Availability : 36229
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USD 0.0253

Multiples of: 10

6 A30 V144 mOhmsP - Channel 500 mV + 150 C1 WSmd/SmtSOT - 23FReelSi1 Channel- 1.8 V8.2 nCEnhancement  
IPD30N08S2L21ATMA1


Infineon Technologies MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
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Infineon Availability : 36142
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USD 0.7403

Multiples of: 1

30 A75 V15.9 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V72 nCEnhancementAec - Q101Optimos
ZXMS6006DGTA


MOSFET 60V N-CH INTELLIFET 60V VDS Mosfet
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Diodes Incorporated Availability : 36053
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USD 0.5489

Multiples of: 1

2.8 A60 V100 mOhmsN - Channel 700 mV- 40 C+ 150 C3 WThrough HoleSOT - 223ReelSi1 Channel5 V Enhancement Intellifet
IRFR3707ZTRPBF


MOSFET N Trench 30V 56A (Tc) 2.25V @ 25uA 9.5 mΩ @ 15A,10V TO-252-2 (DPAK) RoHS
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Infineon Availability : 35890
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USD 0.34

Multiples of: 1

56 A30 V9.5 mOhmsN - Channel 2.35 V- 55 C+ 175 C50 WSmd/SmtDPAKReelSi1 Channel20 V9.6 nCEnhancement  
SI6926ADQ-T1-E3


MOSFET 20V Vds 8V Vgs TSSOP-8
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Vishay Availability : 35853
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USD 0.4466

Multiples of: 1

         Smd/SmtTSSOP - 8Cut TapeSi     Trenchfet
DMN63D8LDWQ-7


MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA
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Diodes Incorporated Availability : 35804
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USD 0.0418

Multiples of: 1

220 mA30 V2.8 Ohms , 2.8 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V870 pC , 870 pCEnhancementAec - Q101 
2N7000


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92
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Diotec Availability : 35643
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USD 0.0352

Multiples of: 1

200 mA60 V5 OhmsN - Channel 800 mV + 150 C350 mWThrough HoleTO - 92 - 2Ammo PackSi1 Channel- 20 V , + 20 V Enhancement 2N7000
Hot BSS159NH6906XTSA1


Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
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Infineon Availability : 35422
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USD 0.2431

Multiples of: 1

           Tape And Reel    Depletion  
RUM001L02T2CL


ROHM Semiconductor MOSFET
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ROHM Availability : 35094
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USD 0.0182

Multiples of: 20

100 mA20 V3.5 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 723 - 3ReelSi1 Channel4.5 V Enhancement  
SUD08P06-155L-BE3


MOSFET P-CHANNEL 60V D-S
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Vishay Availability : 35041
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USD 0.5137

Multiples of: 1

           Cut Tape       
SQ3418AEEV-T1_BE3


MOSFET N-CHANNEL 40V D-S
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Vishay Availability : 35017
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USD 0.3841

Multiples of: 1

8 A40 V26 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V12.4 nCEnhancement TrenchFET
FQD5P20TM


Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
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ON Semiconductor Availability : 34435
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USD 0.3355

Multiples of: 1

            Qfet®      
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