About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
Manufacturer
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MMBT3906M


SOT-723 MOSFETs ROHS
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TECH PUBLIC Availability : 23066
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USD 0.017

Multiples of: 20

                   
IPD35N12S3L24ATMA1


MOSFET N-CHANNEL 100+
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Infineon Availability : 22966
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USD 0.6897

Multiples of: 1

          TO - 252 - 3ReelSi      
RQ6L020SPTCR


MOSFET Pch -60V 2A 1.25W SOT-457T
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ROHM Availability : 22963
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USD 0.4358

Multiples of: 1

2 A60 V210 mOhmsP - Channel - 3 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 475T - 6Cut Tape 1 Channel20 V7.2 nCEnhancement  
SSM6L56FE,LM


MOSFET Small-signal MOSFET 2 in 1 Nch + Pch Vdss: 20V Id: 800mA Pd: 0.15W
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Toshiba Availability : 22940
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USD 0.0468

Multiples of: 1

           Cut Tape       
BSS670S2LH6327XT


MOSFET OptiMOS Buck Converter Series
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Infineon Availability : 22903
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USD 0.0598

Multiples of: 1

540 mA55 V650 mOhmsN - Channel 1.2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V1.7 nCEnhancementAec - Q101 
TSM260P02CX6 RFG


MOSFET -20V -6.5A Single P-Channel Power MOSFET
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Taiwan Semiconductor Availability : 22862
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USD 0.1978

Multiples of: 1

6.5 A20 V21 mOhmsP - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel4.5 V19.5 nCEnhancement  
BSS138PW


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper Availability : 22758
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USD 0.0137

Multiples of: 20

                   
FDU7N60NZTU


Fairchild Semiconductor MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
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ON Semiconductor Availability : 22727
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USD 0.6685

Multiples of: 1

5.5 A600 V1.05 Ohmsn - channel  - 55 C+ 150 C90 Wthrough holeIPAK - 3Tubesi1 channel    unifet
SSM3K122TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=2.0A RDSON=0.123Ohm @ 4V in UFM package
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Toshiba Availability : 22696
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USD 0.0924

Multiples of: 1

2 A20 V123 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUFM - 3Cut TapeSi1 Channel10 V3.4 nCEnhancement U - Mosiii
SISS61DN-T1-GE3


MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
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Vishay Availability : 22633
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USD 0.4237

Multiples of: 1

- 111.9 A- 20 V2.9 mOhmsP - Channel - 0.9 V- 55 C+ 150 C Smd/SmtSISS61DN - T1 - GE3Cut TapeSi1 Channel8 V154 nCEnhancement  
BSZ123N08NS3GATMA1


MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
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Infineon Availability : 22631
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USD 0.5302

Multiples of: 1

           Reel      Optimos
20N06


60V 20A 25mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL Availability : 22518
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USD 0.058

Multiples of: 5

                   
IRF7815TRPBF


Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
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Infineon Availability : 22515
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USD 0.517

Multiples of: 1

5.1 A150 V34 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V25 nC   
FQT7N10TF


100V 1.7A 350mO@850mA,10V 2W null SOT-223-4 MOSFETs ROHS
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ON Semiconductor Availability : 22512
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USD 0.2553

Multiples of: 1

1.7 A100 V350 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSOT - 223ReelSi1 Channel25 V Enhancement  
AO3415E


20V 4.8A 37mΩ@4.5V,4A 1.5W P Channel SOT-23 MOSFETs ROHS
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Bourne Availability : 22421
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USD 0.0326

Multiples of: 10

                   
Hot IRF5210PBF


MOSFET P Trench 100V 40A 4V @ 250uA 60 mΩ @ 24A,10V TO-220 (TO-220-3) RoHS
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Infineon Availability : 22381
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USD 0.7167

Multiples of: 1

            Hexfet®      
STF13N60M2


Transistor: N-MOSFET; unipolar; 600V; 7A; 25W; TO220FP
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STMicroelectronics Availability : 22316
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USD 0.378

Multiples of: 1

            Mdmesh      
SUD50P10-43L-E3


MOSFET 100V 37A 136W 43mohm @ 10V
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Vishay Availability : 22280
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USD 1.155

Multiples of: 1

37.1 A100 V43 mOhmsP - Channel 1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V106 nCEnhancement Trenchfet
AO3404A


MOSFET N Trench 30V 5.8A 3V @ 250uA 28 mΩ @ 5.8A,10V SOT-23-3L RoHS
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Alpha & Omega Availability : 13880
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USD 0.0646

Multiples of: 5

5.8 A  N    1.4 WSurface Mount Tape And Reel    Enhancement  
IRLMS5703TRPBF


MOSFET P Trench 30V 2.4A 1V @ 250uA 180 mΩ @ 1.6A,10V SOT-23-6 RoHS
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Infineon Availability : 0
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USD 0.188

Multiples of: 1

2.3 A30 V400 mOhmsP - Channel    1.7 WSmd/SmtTSOP - 6ReelSi1 Channel20 V7.2 nC   
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