About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RUM001L02T2CL


ROHM Semiconductor MOSFET
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ROHM Availability : 35114
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USD 0.0182

Multiples of: 20

100 mA20 V3.5 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 723 - 3ReelSi1 Channel4.5 V Enhancement  
NX7002AKVL


MOSFET NX7002AK/TO-236AB/REEL 11" Q3/
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Nexperia Availability : 23643
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USD 0.0176

Multiples of: 1

190 mA60 V4.5 OhmsN - Channel 1.1 V- 55 C+ 150 C325 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V0.33 nCEnhancement  
AO3401


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC Availability : 23535
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USD 0.0195

Multiples of: 20

                   
BSZ070N08LS5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon Availability : 23531
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USD 0.7112

Multiples of: 1

         Smd/SmtTSDSON - 8Cut TapeSi     Optimos
IRFR9310TRLPBF-BE3


MOSFET 400V P-CH HEXFET MOSFET D
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Vishay Availability : 23484
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USD 0.651

Multiples of: 1

1.8 A400 V7 OhmsP - Channel 4 V- 55 C+ 150 C50 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V13 nCEnhancement  
BSS138L


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper Availability : 23425
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USD 0.0073

Multiples of: 10

                   
AO3416


SOT-23 MOSFETs ROHS
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Bourne Availability : 23377
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USD 0.0299

Multiples of: 10

                   
NTR5105PT1G


ON Semiconductor MOSFET PFET SOT23 60V 211MA 5OHM
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ON Semiconductor Availability : 23280
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USD 0.0307

Multiples of: 3000

196 mA60 V6 OhmsP - Channel 1 V- 55 C+ 150 C403 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V1 nCEnhancement  
BSS209PWH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
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Infineon Availability : 23280
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USD 0.036

Multiples of: 3000

            Optimos P      
SI1062X-T1-GE3


MOSFET 20V .5A NCH
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Vishay Availability : 23280
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USD 0.0874

Multiples of: 3000

500 mA20 V350 mOhmsN - Channel8 V0.4 v to 1 V- 55 C+ 150 C220 mWSmd/SmtSC - 89 - 3Reel   1 nCEnhancement Trenchfet
2N7000_D26Z


Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 T/R
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ON Semiconductor Availability : 23280
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USD 0.1088

Multiples of: 2000

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel20 V Enhancement  
DMP2069UFY4-7


MOSFET MOSFET P-CHAN.
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Diodes Incorporated Availability : 23280
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USD 0.1544

Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtDFN2015Reel       
SI1441EDH-T1-BE3


P-Channel 20V 4A (Ta), 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay Availability : 23280
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USD 0.2445

Multiples of: 1

          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®Mosfet (Metal Oxide)      
DMN3067LW-7


MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
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Diodes Incorporated Availability : 21829
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USD 0.0456

Multiples of: 5

2.6 A30 V70 mOhmsN - Channel12 V1.5 V- 55 C+ 150 C1.1 WSmd/SmtSOT - 323 - 3ReelSi1 Channel4.5 V4.6 nCEnhancement  
Hot IRF7416TRPBF


MOSFET P Trench 30V 10A 2.04V @ 250uA 20 mΩ @ 5.6A,10V SOIC-8_150mil RoHS
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Infineon Availability : 20482
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USD 0.2187

Multiples of: 1

   P Channel      SOIC - 8Reel       
BSR92PH6327XTSA1


Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
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Infineon Availability : 20370
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USD 0.1261

Multiples of: 3000

            Sipmos      
BS170-D26Z


MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor Availability : 19400
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USD 0.1039

Multiples of: 2000

500 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C830 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel20 V Enhancement  
BSH205G2R


Transistor: P-MOSFET; unipolar; -20V; -1.2A; 890mW; SOT23
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Nexperia Availability : 2745
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USD 0.115

Multiples of: 5

                   
ZXMN3A01FTA


N-Channel 30 V 1.8A (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated Availability : 2531
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USD 0.1478

Multiples of: 5

2 A30 V120 mOhmsN - Channel 1 V- 55 C+ 150 C625 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3.5 nCEnhancement  
PSMN075-100MSEX


MOSFET 100V N-CH STD LEVEL IN LFPAK
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Nexperia Availability : 0
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USD 0.5276

Multiples of: 1

18 A100 V71 mOhmsN - Channel 3.3 V- 55 C+ 175 C65 WSmd/SmtLFPAK33 - 8ReelSi1 Channel10 V16.4 nCEnhancement  
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