About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138LT1G


MOSFET 50V 200mA N-Channel
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ON Semiconductor Availability : 55833
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USD 0.0196

Multiples of: 20

200 mA50 V3.5 OhmsN - Channel 850 mV- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V Enhancement  
BSD223PH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
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Infineon Availability : 22236
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USD 0.0539

Multiples of: 1

            Optimos P      
FH1304G6


45V PDFN-8L(3.3x3.3) MOSFETs ROHS
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Xinfeihong Availability : 22219
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USD 0.0755

Multiples of: 1

                   
UMW1N60G


MOSFET N Trench 600V 1A (Tc) 4V @ 250uA 11 Ω @ 500mA,10V SOT-223 RoHS
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Youtai Availability : 22159
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USD 0.0499

Multiples of: 5

                   
DMN2005DLP4K-7


MOSFET N-Channel
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Diodes Incorporated Availability : 22148
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USD 0.1181

Multiples of: 1

200 mA20 V1.5 OhmsN - Channel  - 65 C+ 150 C350 mWSmd/SmtDFN - 6ReelSi2 Channel10 V Enhancement  
TMN6080NF


PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS Availability : 22145
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USD 0.1527

Multiples of: 5

                   
3401A


30V 4.5A 42mΩ 1.3V P Channel SOT23 MOSFETs ROHS
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HL Availability : 22135
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USD 0.0156

Multiples of: 20

                   
AO3415


20V 4A 1.2W 50mΩ@4.5V,4.0A 800mV@250uA 160pF@10V P Channel 1450pF@10V 17.2nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK Availability : 22135
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USD 0.0302

Multiples of: 10

                   
SSM3K37MFV,L3F


MOSFET Small-signal FET 0.25A 20V 12pF
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 22065
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USD 0.0353

Multiples of: 1

250 mA20 V2.2 OhmsN - Channel 350 mV + 150 C150 mWSmd/SmtSOT - 723 - 3Cut TapeSi1 Channel4.5 V Enhancement  
BSC080N03MS G


Infineon Technologies MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
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Infineon Availability : 22028
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USD 0.3105

Multiples of: 1

13 A30 V8 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
IRF5802TRPBF


Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 21981
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USD 0.1188

Multiples of: 1

900 mA150 V1.2 OhmsN - Channel 5.5 V- 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel30 V4.5 nC   
DMN67D7L-7


MOSFET MOSFET BVDSS: 41V-60V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 21915
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USD 0.0308

Multiples of: 1

210 mA60 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C570 mWSmd/SmtSOT - 23 - 3 Si1 Channel10 V821 pCEnhancement  
SI1304BDL


SOT323 MOSFETs ROHS
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TECH PUBLIC Availability : 21904
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USD 0.029

Multiples of: 10

                   
SI2305


12V 4.1A 90mΩ@1.8V,2A 1.3W P Channel SOT-23-3 MOSFETs ROHS
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GOODWORK Availability : 21889
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USD 0.0209

Multiples of: 10

                   
FDS8840NZ


MOSFET PT4 Nch with Zener
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ON Semiconductor Availability : 21866
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USD 0.6578

Multiples of: 1

18.6 A40 V4.5 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel20 V Enhancement Powertrench
DN2625DK6-G


Transistor: N-MOSFET; unipolar; 250V; 1.1A; DFN8
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Microchip Availability : 21857
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USD 2.464

Multiples of: 1

                   
FQD12N20LTM


Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
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ON Semiconductor Availability : 21835
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USD 0.363

Multiples of: 1

            Qfet®      
STP16NF06


mosfet n trench 60v 16a 4v @ 250ua 100 m @ 8a,10v to-220 (to-220-3) rohs
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STMicroelectronics Availability : 970
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USD 0.3898

Multiples of: 1000

                   
2N60G


SOT-223 MOSFETs ROHS
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Youtai Availability : 0
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USD 0.0657

Multiples of: 5

                   
BUK7Y9R9-80EX


N-Channel 80 V 89A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia Availability : 0
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USD 0.9273

Multiples of: 1

89 A80 V7.3 mOhmsN - Channel20 V3 V- 55 C+ 175 C195 WSmd/SmtLFPAK56 - 4ReelSi1 Channel20 V51.6 nCEnhancement  
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