About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT3030KLHRC11


SiC MOSFETs 1200V 72A 339W SIC 30mOhm TO-247N
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 346
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USD 63.3305

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV72 A30 mOhms- 4 V , + 22 V2.7 V131 nC- 55 C+ 175 C339 WEnhancementAEC - Q101 
IMTA65R060M2HXTMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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Infineon Availability : 345
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USD 3.278

Multiples of: 1

SMD/SMT N - Channel1 Channel  60 mOhms      Enhancement CoolSiC
SICW050N065H-BP


SiC MOSFETs SiC MOSFET,TO-247AB
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Micro Commercial Components (MCC) Availability : 345
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USD 4.95

Multiples of: 1

Through Hole N - Channel1 Channel650 V60 A65 mOhms- 10 V , + 25 V2.6 V121 nC- 55 C+ 175 C250 WEnhancement  
AIMCQ120R120M1TXTMA1


SiC MOSFETs SIC_DISCRETE
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Infineon Availability : 344
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USD 4.796

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV24 A150 mOhms- 10 V , + 25 V5.1 V18 nC- 55 C+ 175 C161 WEnhancement CoolSiC
NVHL1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
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ON Semiconductor Availability : 341
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USD 4.532

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV4.2 A1.43 Ohms- 15 V , + 25 V3.2 V14 nC- 55 C+ 175 C48 WEnhancement EliteSiC
SICW025N065H-BP


SiC MOSFETs SiC MOSFET,TO-247AB
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Micro Commercial Components (MCC) Availability : 337
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USD 8.624

Multiples of: 1

Through Hole N - Channel1 Channel650 V107 A35 mOhms- 10 V , + 22 V3.1 V275 nC- 55 C+ 175 C375 WEnhancement  
SICW028N120A4-BP


SiC MOSFETs
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Micro Commercial Components (MCC) Availability : 335
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USD 17.523

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV80 A30 mOhms- 5 V , + 22 V3 V168 nC- 55 C+ 175 C375 WEnhancement  
IMLT65R050M2HXTMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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Infineon Availability : 328
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USD 4.103

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V 50 mOhms      Enhancement CoolSiC
IMZA65R010M2HXKSA1


SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
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Infineon Availability : 325
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USD 16.247

Multiples of: 1

Through Hole N - Channel1 Channel650 V144 A13.1 mOhms- 10 V , + 25 V5.6 V112 nC- 55 C+ 175 C440 WEnhancement CoolSiC
IMW65R033M2HXKSA1


SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2
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Infineon Availability : 320
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USD 7.348

Multiples of: 1

Through Hole N - Channel1 Channel650 V53 A41 mOhms- 10 V , + 25 V5.6 V34 nC- 55 C+ 175 C194 WEnhancement CoolSiC
IMYH200R024M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 316
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USD 34.43

Multiples of: 1

Through Hole N - Channel1 Channel2 kV89 A33 mOhms- 10 V , + 23 V3.5 V137 nC- 55 C+ 150 C576 WEnhancement CoolSIC
C3M0025065K


SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
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Wolfspeed Availability : 311
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USD 12.298

Multiples of: 1

Through Hole N - Channel1 Channel650 V97 A25 mOhms- 8 V , + 19 V3.6 V112 nC- 40 C+ 175 C326 WEnhancement  
AIMCQ120R080M1TXTMA1


SiC MOSFETs Tailored to address OBC/DC-DC applications for 800V Automotive architecture
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Infineon Availability : 305
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USD 5.973

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV34 A100 mOhms- 10 V , + 25 V5.1 V24 nC- 55 C+ 175 C211 WEnhancement CoolSiC
IMZC120R040M2HXKSA1


SiC MOSFETs CoolSiC MOSFET discrete 1200V, 40 mohm G2
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Infineon Availability : 298
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USD 7.766

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV48 A40 mOhms- 10 V , + 25 V5.1 V39 nC- 55 C+ 175 C218 WEnhancement CoolSiC
IMLT65R020M2HXTMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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Infineon Availability : 298
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USD 9.823

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V 20 mOhms      Enhancement CoolSiC
MSC040SMA120B


SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247
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Microchip Availability : 298
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USD 21.4148

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV62 A50 mOhms- 10 V , + 25 V1.8 V140 nC- 55 C+ 175 C311 WEnhancement  
C3M0120090J


SiC MOSFETs G3 SiC MOSFET 900V, 120 mOhm
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Wolfspeed Availability : 296
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USD 8.173

Multiples of: 1

Smd/Smt N - Channel1 Channel900 V22 A170 mOhms- 8 v , + 18 V1.8 V17.3 nC- 55 C+ 150 C83 WEnhancement  
IMTA65R033M2HXTMA1


SiC MOSFETs CoolSiC MOSFET 650 V G2
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Infineon Availability : 291
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USD 5.863

Multiples of: 1

SMD/SMT N - Channel 650 V68 A41 mOhms- 7 V to + 23 V5.6 V34 nC- 55 C+ 175 C315 WEnhancement CoolSiC
SCT3080ARC14


SiC MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
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ROHM Availability : 290
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USD 13.8562

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A80 mOhms- 4 V , + 22 V5.6 V48 nC- 55 C+ 175 C134 WEnhancement  
GC2M0080120D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC Availability : 0
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USD 2.9378

Multiples of: 1

                
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