About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
IMW65R057M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 208
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USD 5.3836

Multiples of: 1

Through Hole N - Channel1 Channel650 V35 A74 mOhms- 5 V , + 23 V5.7 V28 nC- 55 C+ 175 C133 WEnhancement  
C3M0016120K


SiC MOSFETs SiC MOSFET G3 1200V 16mOhms
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Wolfspeed Availability : 206
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USD 44.9626

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV115 A28.8 mOhms- 4 V , + 15 V1.8 V211 nC- 40 C+ 175 C556 WEnhancement  
IMWH170R450M1XKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 202
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USD 4.3499

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV10 A390 mOhms- 10 V , + 20 V5.7 V11.7 nC- 55 C+ 175 C111 WEnhancement CoolSiC
MSC090SMA070B


SiC MOSFETs MOSFET SIC 700 V 90 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 192
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USD 4.6578

Multiples of: 1

Through Hole N - Channel1 Channel700 V28 A111 mOhms- 10 V , + 23 V1.9 V38 nC- 55 C+ 175 C90 WEnhancement  
NVH4L030N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 191
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USD 18.8302

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV60 A28.5 mOhms- 8 V , + 22 V3.13 V107 nC- 55 C+ 175 C308 WEnhancement EliteSiC
TW045N120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm
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Toshiba Availability : 190
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USD 17.0624

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV40 A182 mOhms- 10 V , + 25 V5 V57 nC- 55 C+ 175 C182 WEnhancement  
AIMZA75R140M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 188
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USD 3.7917

Multiples of: 1

Through Hole N - Channel1 Channel750 V16 A182 mOhms- 2 V , + 20 V5.6 V13 nC- 55 C+ 175 C86 WEnhancement  
MSC750SMA170S


SiC MOSFETs MOSFET SIC 1700 V 750 mOhm TO-268
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 186
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USD 5.336

Multiples of: 1

SMD/SMT N - Channel1 Channel1.7 kV4.4 A750 mOhms- 10 V , + 23 V3.25 V11 nC- 55 C+ 175 C63 WEnhancement  
GC2M0045170D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC Availability : 186
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USD 38.1718

Multiples of: 1

                
AIMZH120R020M1TXKSA1


SiC MOSFETs Y
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Infineon Availability : 181
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USD 24.1222

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV100 A19 mOhms- 5 V , + 23 V5.1 V82 nC- 55 C+ 175 C429 WEnhancement CoolSiC
IMZA65R057M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 176
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USD 4.323

Multiples of: 1

Through Hole N - Channel1 Channel650 V35 A74 mOhms- 5 V , + 23 V5.7 V28 nC- 55 C+ 175 C133 WEnhancement  
IMWH170R650M1XKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 175
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USD 3.4311

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV7.5 A580 mOhms- 10 V , + 20 V5.7 V8.1 nC- 55 C+ 175 C88 WEnhancement CoolSiC
IMYH200R050M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 174
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USD 27.1417

Multiples of: 1

Through Hole N - Channel1 Channel2 kV48 A64 mOhms- 10 V , + 23 V3.5 V82 nC- 55 C+ 150 C348 WEnhancement CoolSIC
MSC015SMA070B4


SiC MOSFETs MOSFET SIC 700 V 15 mOhm TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 173
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USD 31.548

Multiples of: 1

Through Hole N - Channel1 Channel700 V140 A19 mOhms- 10 V , + 23 V1.9 V215 nC- 55 C+ 175 C455 WEnhancement  
TW140N120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 172
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USD 8.8161

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A182 mOhms- 10 V , + 25 V5 V24 nC- 55 C+ 175 C107 WEnhancement  
IMYH200R024M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 169
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USD 53.1643

Multiples of: 1

Through Hole N - Channel1 Channel2 kV89 A33 mOhms- 10 V , + 23 V3.5 V137 nC- 55 C+ 150 C576 WEnhancement CoolSIC
MSC360SMA120B


SiC MOSFETs MOSFET SIC 1200 V 360 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 167
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USD 5.379

Multiples of: 1

Through Hole N - Channel 1.2 kV 360 mOhms         
G3R75MT12D


SiC MOSFETs 1200V 75mohm TO-247-3 G3R SiC MOSFET
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GeneSiC Semiconductor Availability : 165
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USD 12.7528

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV36 A75 mOhms- 5 V , + 15 V2.7 V47 nC- 55 C+ 175 C182 WEnhancement  
NTHL030N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L
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ON Semiconductor Availability : 0
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USD 7.1995

Multiples of: 1

Through Hole   1.2 kV 30 Ohms        EliteSiC
GC3M0040120D


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC Availability : 0
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USD 9.174

Multiples of: 1

                
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