X-On Electronics has gained recognition as a prominent supplier of AS4C16M16SA-7BCNTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C16M16SA-7BCNTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C16M16SA-7BCNTR Alliance Memory

AS4C16M16SA-7BCNTR electronic component of Alliance Memory
AS4C16M16SA-7BCNTR Alliance Memory
AS4C16M16SA-7BCNTR DRAM
AS4C16M16SA-7BCNTR  Semiconductors

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Part No. AS4C16M16SA-7BCNTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM
Datasheet: AS4C16M16SA-7BCNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 3.993 ea
Line Total: USD 9982.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 3.993
5000 : USD 3.938

   
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We are delighted to provide the AS4C16M16SA-7BCNTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C16M16SA-7BCNTR and other electronic components in the DRAM category and beyond.

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AS4C16M16SA-C&I Revision History Revision Details Date Rev 1.0 Preliminary datasheet February 2014 Rev 2.0 Correct some typing mistakes. March 2014 Rev 3.0 1. Add AS4C16M16SA-6TCN part. March 2015 2. Modify ordering information. 3. Add part number system on the last page. Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. Confidential 0 Rev. 3.0 Mar./2015 AS4C16M16SA-C&I 256M (16Mx16bit) Synchronous DRAM (SDRAM) Confidential Advanced(Rev. 3.0, Mar. /2015) Features Overview Fast access time from clock: 5/5.4 ns The 256Mb SDRAM is a high-speed CMOS Fast clock rate: 166/143 MHz synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 4M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented accesses start at a selected location - CAS Latency: 2 or 3 and continue for a programmed number of locations in - Burst Length: 1, 2, 4, 8, or full page a programmed sequence. Accesses begin with the - Burst Type: Sequential or Interleaved registration of a BankActivate command which is then followed by a Read or Write command. - Burst stop function Operating temperature range The SDRAM provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a - Commercial (0 ~ 70C) burst termination option. An auto precharge function - Industrial (-40 ~ 85C) may be enabled to provide a self-timed row precharge Auto Refresh and Self Refresh that is initiated at the end of the burst sequence. The 8192 refresh cycles/64ms refresh functions, either Auto or Self Refresh are easy CKE power down mode to use. Single +3.3V 0.3V power supply By having a programmable mode register, the system Interface: LVTTL can choose the most suitable modes to maximize its 54-pin 400 mil plastic TSOP II package performance. These devices are well suited for applications requiring high memory bandwidth and 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package particularly well suited to high performance PC - All parts ROHS are compliant applications. Table 1. Key Specifications AS4C16M16SA -6/7 tCK3 Clock Cycle time (min.) 6/7 ns tAC3 Access time from CLK (max.) 5/5.4 ns tRAS Row Active time (min.) 42/42 ns tRC Row Cycle time (min.) 60/63 ns Table 2. Ordering Information Temperature Temp Range Part Number Frequency Package Commercial 0~70 AS4C16M16SA-7TCN 143 MHz 54 pin TSOP II Commercial 0~70 AS4C16M16SA-6TCN 166 MHz 54 pin TSOP II AS4C16M16SA-6TIN 166 MHz 54 pin TSOP II Industrial -40~85 Commercial AS4C16M16SA-7BCN 143 MHz 54 ball TFBGA 0~70 AS4C16M16SA-6BIN 166 MHz 54 ball TFBGA Industrial -40~85 T : indicates TSOP II package B : indicates TFBGA package C: Commercial I: Industrial N : indicates Pb free and Halogen free Confidential 1 Rev. 3.0 Mar. /2015

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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