X-On Electronics has gained recognition as a prominent supplier of AS4C1G8D3LA-10BCN dram across the USA, India, Europe, Australia, and various other global locations. AS4C1G8D3LA-10BCN dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C1G8D3LA-10BCN

AS4C1G8D3LA-10BCN electronic component of Alliance Memory
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Part No.AS4C1G8D3LA-10BCN
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 8G 1Gx8 933MHz 1.35V DDR3 ET
Datasheet: AS4C1G8D3LA-10BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 29.8644 ea
Line Total: USD 29.86

Availability - 331
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
234 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 28.9455
10 : USD 27.2205
25 : USD 26.5535
50 : USD 25.7255
100 : USD 23.1725
220 : USD 23.1725
440 : USD 23.1725
1100 : USD 22.402
2640 : USD 22.2755

     
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We proudly offer the AS4C1G8D3LA-10BCN DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AS4C1G8D3LA-10BCN DRAM.

AS4C1G8D3LA Revision History 8Gbit DDR3L SDRAM 8 BANKS X 128Mbit X 8 - Dual Die Package (DDP) 78ball FBGA Package Revision Details Date Rev 1.0 Preliminary datasheet Feb. 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Rev.1.0. Feb.2019 Confidential - 1 of 41 -AS4C1G8D3LA Specifications - Density : 8G bits Features - Organization : - Double-data-rate architecture two data transfers per clock cycle - 128M words x 8 bits x 8 banks - The high-speed data transfer is realized by the 8 bits prefetch pipe- - Package : lined architecture - 78-ball FBGA - Bi-directional differential data strobe (DQS and DQS) is transmitted/ - Two 1Gbit x 4 dies stacked (DDP) received with data for capturing data at the receiver - Lead-free (RoHS compliant) and Halogen-free - DQS is edge-aligned with data for READs center-aligned with data - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) for WRITEs - -Backward compatible to VDD, VDDQ = 1.5V 0.075V - Differential clock inputs (CK and CK) - Data rate : 1866Mbps - DLL aligns DQ and DQS transitions with CK transitions - 2KB page size - Commands entered on each positive CK edge data and data mask - Row address: A0 to A15 referenced to both edges of DQS - Column address: A0 to A9, A11 - Data mask (DM) for write data - Eight internal banks for concurrent operation - Posted CAS by programmable additive latency for better command - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) and data bus efficiency - Burst type (BT) : - On-Die Termination (ODT) for better signal quality - Sequential (8, 4 with BC) - Synchronous ODT - Interleave (8, 4 with BC) ODT - Dynamic - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11, 13 - Asynchronous ODT - CAS Write Latency (CWL) : 5, 6, 7, 8 ,9 - Multi Purpose Register (MPR) for pre-defined pattern read out - Precharge : auto precharge option for each burst access - ZQ calibration for DQ drive and ODT - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - RESET pin for Power-up sequence and reset function - Refresh : auto-refresh, self-refresh - SRT range : Normal/extended - Refresh cycles : - Programmable Output driver impedance control - Average refresh period 7.8 s at -40C Tc +85C 3.9 s at +85C < Tc +105C - Operating case temperature range - Commerc ial Tc = 0C to +95C - Industrial Tc = -40C to +95C - Automotive Tc = -40C to +105C Table 1. Ordering Information Org Temperature Max Clock (MHz) Product part No Package 933 AS4C1AS4C1G8D3LA-10BCNG8D3LA-10BCN 78-ball FBGA 1G x 8 Commercial 0C to 95C 933 AS4C1G8D3LA-10BIN 1G x 8 Industrial -40C to 95C 78-ball FBGA 933 78-ball FBGA 1G x 8 Automotive -40C to 105C AS4C1G8D3LA-10BAN Table 2. Speed Grade Information CAS Latency tRCD(ns) Speed Grade Clock Frequency tRP(ns) DDR3-1866 933 MHz 13 13.91 13.91 - 2 of 41 - Rev.1.0. Feb.2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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