X-On Electronics has gained recognition as a prominent supplier of AS4C1G8D4-75BIN dram across the USA, India, Europe, Australia, and various other global locations. AS4C1G8D4-75BIN dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C1G8D4-75BIN Alliance Memory

AS4C1G8D4-75BIN electronic component of Alliance Memory
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See Product Specifications
Part No.AS4C1G8D4-75BIN
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM
Datasheet: AS4C1G8D4-75BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 18.655 ea
Line Total: USD 18.66

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 15.318
10 : USD 14.421
25 : USD 14.053
100 : USD 12.65
209 : USD 12.1095
418 : USD 12.1095
1045 : USD 12.1095
2508 : USD 12.1095
5016 : USD 12.1095

     
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We are delighted to provide the AS4C1G8D4-75BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C1G8D4-75BIN and other electronic components in the DRAM category and beyond.

AS4C1G8D4 AS4C512M16D4 Revision History 8Gb DDR4 AS4C512M16D4 / AS4C1G8D4 - FBGA PACKAGE Revision Details Date Rev 1.0 Initial Release Aug 2020 Alliance Memory Inc,12815 NE 124th Street Suite D, Kirkland, WA 98034 USA. Alliance Memory Inc. reserves the right to change products or specification without notice. Confidential - 1 of 235 - Rev.1.0 Aug. 2020AS4C1G8D4 AS4C512M16D4 Specifications Features - Density : 8G bits - 1.2V pseudo open-drain interface - Organization : - 8n prefetch architecture - 64M words x 8 bits x 16 banks (AS4C1G8D4) - Internal VREFDQ training - 64M words x 16 bits x 8 banks (AS4C512M16D4) - Programmable data strobe preambles - Package : - Data strobe preamble training - 78-ball FBGA for x8 / 96-ball FBGA for x16 - Command/Address latency (CAL) - Lead-free (RoHS compliant) and Halogen-free - Multipurpose register READ and WRITE capability - Power supply : - Write and read leveling - VDD, VDDQ = 1.2V 60mV - Auto refresh and self refresh Modes - VPP = 2.5V, -125mV / +250mV - Low-power auto self refresh (LPASR) - Data rate : 2133Mbps/2400Mbps/2666Mbps - Auto Self Refresh (ASR) by DRAM built-in TS - 1KB page size for X8 / 2KB page size for X16 - Fine granularity refresh - Row address: A0 to A15 - Self refresh abort - Column address: A0 to A9 - Maximum power saving - Sixteen-banks(4 bank group with 4 banks for each bank group) for - Output driver calibration x8 and eight-banks(2 bank group with 4 banks for each bank group) - Configurable on-die termination (ODT) for x16 - Data bus inversion (DBI) for data bus - Burst lengths (BL) : BL8, BC4, BC4 or 8 on the fly - Command/Address (CA) parity - Burst type (BT) : Sequential, Interleave - Databus write cyclic redundancy check (CRC) - CAS Latency (CL) : 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21 - Per-DRAM addressability - CAS Write Latency (CWL) : 9, 10, 11, 12, 14, 16, 18 - Connectivity test (x16) - Additive Latency (AL) : 0, CL-1, CL-2 - CS to Command Address Latency (AL) : 3, 4, 5, 6, 8 - Command Address Parity Latency : 4, 5, 6 - Write Recovery time : 10, 12, 14, 16, 18, 20, 24 - Driver strength : RZQ/7, RZQ/5 (RZQ = 240 ) - RTT PARK(34/40/48/60/80/120/240) - RTT NOM(34/40/48/60/80/120/240) - RTT WR(80/120/240) - Read Preamble (1T/2T) - Write Preamble (1T/2T) - LPASR(Manual:Normal/Reduced/Extended, Auto:TS) - Refresh cycles (Average refresh period) : 7.8 s at -40C Tc +85C 3.9 s at +85C < Tc +95C - Operating case temperature range - Commercial Tc = 0C to +95C - Industrial Tc = -40C to +95C Table 1. Ordering Information Org Temperature Tc Max Clock (MHz) Product part No Package 1G x 8 78-ball FBGA AS4C1G8D4-75BCN 1333 Commercial 0C to 95C AS4C1G8D4-75BIN 78-ball FBGA 1G x 8 Industrial -40C to 95C 1333 512M x 16 96-ball FBGA AS4C512M16D4- 75BCN 1333 Commercial 0C to 95C AS4C512M16D4-75B IN 512M x 16 Industrial -40C to 95C 1333 96-ball FBGA Table 2. Speed Grade Information Speed Grade Clock Frequency tRCD(ns) CAS Latency tRP(ns) 19 DDR4-2666 1333 MHz 14.25 14.25 Confidential - 2 of 235 - Rev.1.0 Aug. 2020

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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