X-On Electronics has gained recognition as a prominent supplier of AS4C1M16S-7TCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C1M16S-7TCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C1M16S-7TCN Alliance Memory

AS4C1M16S-7TCN electronic component of Alliance Memory
AS4C1M16S-7TCN Alliance Memory
AS4C1M16S-7TCN DRAM
AS4C1M16S-7TCN  Semiconductors

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Part No. AS4C1M16S-7TCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 16Mb, 3.3V, 143Mhz 1M x 16 SDRAM
Datasheet: AS4C1M16S-7TCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.425 ea
Line Total: USD 2.42 
Availability - 188
Ship by Mon. 14 Jul to Wed. 16 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
188
Ship by Mon. 14 Jul to Wed. 16 Jul
MOQ : 1
Multiples : 1
1 : USD 2.425
10 : USD 2.196
25 : USD 1.958
117 : USD 1.848
234 : USD 1.738
585 : USD 1.727
1053 : USD 1.705
2574 : USD 1.639

   
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We are delighted to provide the AS4C1M16S-7TCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C1M16S-7TCN and other electronic components in the DRAM category and beyond.

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AS4C1M16S-C&I Revision History Revision Details Date Rev 1.0 Preliminary datasheet February 2015 Rev 2.0 Add 166MHZ and commercial & industrial parts. March 2015 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. Confidential 0 Rev. 2.0 March /2015 AS4C1M16S-C&I 1M x 16 bit Synchronous DRAM (SDRAM) Advanced (Rev. 2.0, March /2015) Features Overview Fast access time: 5.4/5.4ns The 16Mb SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is Fast clock rate: 166/143 MHz internally configured as a dual 512K word x 16 Self refresh mode: standard DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 512K word x 16-bit x 2-bank CLK). Each of the 512K x 16 bit banks is organized Programmable Mode registers as 2048 rows by 256 columns by 16 bits. Read and - CAS Latency: 2, or 3 write accesses to the SDRAM are burst oriented - Burst Length: 1, 2, 4, 8, or full page accesses start at a selected location and continue for a programmed number of locations in a - Burst Type: Sequential or Interleaved programmed sequence. Accesses begin with the - Burst stop function registration of a BankActivate command which is Individual byte controlled by LDQM and UDQM then followed by a Read or Write command. Auto Refresh and Self Refresh The SDRAM provides for programmable Read 4096 refresh cycles/64ms or Write burst lengths of 1, 2, 4, 8, or full page, with CKE power down mode a burst termination option. An auto precharge Industrial Temperature: -40~85 C function may be enabled to provide a self-timed row JEDEC standard +3.3V 0.3V power supply precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Operating temperature range Refresh are easy to use. By having a programmable - Commercial (0 ~ 70C) mode register, the system can choose the most - Industrial (-40 ~ 85C) suitable modes to maximize its performance. These Interface: LVTTL devices are well suited for applications requiring 50-pin 400 mil plastic TSOP II package high memory bandwidth and particularly well suited -Pb and Halogen Free to high performance PC applications Table 1. Key Specifications AS4C1M16S-C&I -6/7 tCK3 Clock Cycle time(min.) 6/7 ns tAC3 Access time from CLK (max.) 5.4/5.4 ns tRAS Row Active time(min.) 42/42 ns tRC Row Cycle time(min.) 60/63 ns Table 2.Ordering Information Part Number Frequency Package Temperature Temp Range AS4C1M16S-7TCN 143MHz 50-Pin TSOPII Commercial 0~70 AS4C1M16S-6TIN 166MHz 50-Pin TSOPII Industrial -40~85 AS4C1M16S-6T CN 166MHz 50-Pin TSOPII Commercial 0~70 T: indicates TSOP II package C: Commercial I: Industrial N: indicates Pb and Halogen Free Confidential 1 Rev. 2.0 March /2015

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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